Fairchild FQT4N25 service manual

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FQT4N25

250V N-Channel MOSFET

FQT4N25

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching

Features

• 0.83A, 250V, R

• Low gate charge ( typical 4.3 nC)

• Low Crss ( typical 4.8 pF)

• Fast switching

• Improved dv/dt capability

= 1.75Ω @VGS = 10 V

DS(on)

performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.

D

!

!

!

!

"

"

"

"

"

"
"

"

!

!

S

D

G

Absolute Maximum Ratings T

S

SOT-223

FQT Series

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQT4N25 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 250 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 70°C)

C

(Note 1)

0.83 A

0.66 A

3.3 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

52 mJ

0.83 A

0.25 mJ

5.5 V/ns

2.5 W

- Derate above 25°C 0.02 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation

FQT4N25

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 250 V, VGS = 0 V

DS

V

= 200 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

250 -- -- V

-- 0.22 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 0.415 A

V

GS

= 50 V, ID = 0.415 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.38 1.75 Ω

-- 1.28 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 35 45 pF
Reverse Transfer Capacitance -- 4.8 6.5 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 155 200 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 45 100 ns
Turn-Off Delay Time -- 6.4 25 ns
Turn-Off Fall Time -- 22 55 ns
Total Gate Charge
Gate-Source Charge -- 1.3 -- nC
Gate-Drain Charge -- 2.1 -- nC

= 125 V, ID = 3.6 A,

V

DD

= 25 Ω

R

G

V

= 200 V, ID = 3.6 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 6.8 25 ns

-- 4.3 5.6 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 120mH, IAS = 0.83A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 3.6A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 0.83 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 3.3 A

= 0 V, IS = 0.83 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.35 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 3.6 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 110 -- ns

(Note 4)

Rev. A, May 2001

Typical Characteristics

FQT4N25

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

0

6.0 V

10

Botto m : 5.5 V

, Dra in Curre n t [A ]

D

I

-1

10

-1

10

0

10

"

Note s :

1. 250#s Pulse Te st

!

2. TC = 25

1

10

VDS, Drain-Source Voltage [V]

8

6

],

4

$

[

DS(ON)

R

2

Drain-Source On-Resistance

0

02468

VGS = 10V

VGS = 20V

"

Note : T

!

= 25

J

ID, Dra in Current [A]

0

10

, Dra in C u rre n t [A ]

D

I

-1

10

246810

!

150

!

25

!

-55

"

Note s :

= 50V

1. V

DS

2. 250#s Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

!

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

!

25

"

Note s :

= 0V

1. V

GS

2. 250#s Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 50V

VDS = 125V

VDS = 200V

"

Note : I

350

300

250

200

150

Capacitance [pF]

100

50

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

"

Note s :

= 0 V

1. V

GS

10

2. f = 1 MHz

1

C

rss

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

012345

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 3.6 A

D

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation