Fairchild FQT4N20L service manual
FQT4N20L
200V LOGIC N-Channel MOSFET
FQT4N20L
May 2001
TM
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, DC-AC converters for
Features
• 0.85A, 200V, R
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
= 1.35Ω @VGS = 10 V
DS(on)
uninterrupted power supply, motor control.
D
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S
D
G
Absolute Maximum Ratings T
S
SOT-223
FQT Series
= 25°C unless otherwise noted
C
!
!
G
Symbol Parameter FQT4N20L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 200 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 70°C)
C
(Note 1)
0.85 A
0.68 A
3.4 A
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
52 mJ
0.85 A
0.22 mJ
5.5 V/ns
2.2 W
- Derate above 25°C 0.018 W/°C
T
, T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Ambient * -- 57 °C/W
Rev. A, May 2001©2001 Fairchild Semiconductor Corporation
FQT4N20L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆B
∆T
I
DSS
I
GSSF
I
GSSR
DSS
VDSS
J
Drain-Source Breakdown Voltage
/
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 200 V, VGS = 0 V
DS
V
= 160 V, TC = 125°C
DS
V
= 20 V, VDS = 0 V
GS
= -20 V, VDS = 0 V
V
GS
200 -- -- V
-- 0.16 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID = 0.425 A
GS
= 5 V, ID = 0.425 A
V
GS
V
= 30 V, ID = 0.425 A
DS
(Note 4)
1.0 -- 2.0 V
1.10
--
1.13
1.35
1.40
-- 1.42 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 36 45 pF
Reverse Transfer Capacitance -- 6 8 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 240 310 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns
Turn-Off Delay Time -- 15 40 ns
Turn-Off Fall Time -- 40 90 ns
Total Gate Charge
Gate-Source Charge -- 1.0 -- nC
Gate-Drain Charge -- 1.9 -- nC
= 100 V, ID = 3.8 A,
V
DD
= 25 Ω
R
G
= 160 V, ID = 3.8 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 7 25 ns
-- 4.0 5.2 nC
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 108mH, IAS = 0.85A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3.8A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 0.85 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 3.4 A
= 0 V, IS = 0.85 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.25 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 3.8 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 90 -- ns
(Note 4)
Rev. A, May 2001
Typical Characteristics
FQT4N20L
V
GS
Top : 10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
0
10
3.5 V
Bottom : 3.0 V
, Dra in C u rr e n t [A ]
D
I
-1
10
-1
10
0
10
※
Notes :
1. 250μs Pulse T est
℃
= 25
2. T
C
1
10
VDS , Dra in- S o ur ce Voltag e [V ]
8
6
]
Ω
, [
4
DS(on)
R
2
Drain-Source On-Resistance
0
02468
VGS = 5 V
VGS = 10V
ID , Drai n Curren t [A]
0
10
, Dra in C u rr en t [A ]
D
I
10
℃
150
℃
25
-1
0246810
℃
-55
※
Notes :
1. V
= 30V
DS
2. 250μs Pulse Test
VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
0
10
℃
150
℃
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
25
※
Note s :
= 0V
1. V
GS
2. 250μs Pulse Test
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 40V
※
Note : I
450
400
350
300
250
200
150
Capacitance [pF]
100
50
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
C
rss
0
10
1
10
※
Note s :
= 0 V
1. V
GS
2. f = 1 MHz
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
012345678
VDS = 100V
VDS = 160V
QG, Tota l Gate Charge [n C]
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
= 3.8 A
D
Rev. A, May 2001©2001 Fairchild Semiconductor Corporation
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