Fairchild FQT2P25 service manual

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FQT2P25

250V P-Channel MOSFET

FQT2P25

May 2001

TM

QFET

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching

Features

• -0.55A, -250V, R

• Low gate charge ( typical 6.5 nC)

• Low Crss ( typical 6.5 pF)

• Fast switching

• Improved dv/dt capability

= 4.0Ω @VGS = 10 V

DS(on)

performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.

S

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G

Absolute Maximum Ratings T

S

SOT-223

FQT Series

= 25°C unless otherwise noted

C

!!!!

!!!!

G

Symbol Parameter FQT2P25 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -250 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-0.55 A

-0.35 A

-2.2 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

120 mJ

-0.55 A

0.25 mJ

-5.5 V/ns

2.5 W

- Derate above 25°C 0.02 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation

FQT2P25

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parame ter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆B
∆T
I

DSS

I

GSSF

I

GSSR

DSS

VDSS

J

Drain-Source Breakdown Voltage

/

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -250 V, VGS = 0 V

DS

V

= -200 V, TC = 125°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-250 -- -- V

-- -0.2 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -0.275 A

V

GS

= -40 V, ID = -0.275 A

V

DS

(Note 4)

-3.0 -- -5.0 V

-- 3.15 4.0 Ω

-- 0.6 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 40 55 pF
Reverse Transfer Capacitance -- 6.5 8.5 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 190 250 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 40 90 ns
Turn-Off Delay Time -- 12 35 ns
Turn-Off Fall Time -- 25 60 n s
Total Gate Charge
Gate-Source Charge -- 1.8 -- nC
Gate-Drain Charge -- 3.0 -- nC

= -125 V, ID = -2.3 A,

V

DD

= 25 Ω

R

G

V

= -200 V, ID = -2.3 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 8.5 25 ns

-- 6.5 8.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

trr Reverse Recovery Time V
Qrr Reverse Recovery Charge -- 0.4 -- µC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 635mH, IAS = -0.55A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -2.3A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- -0.55 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -2.2 A

= 0 V, IS = -0.55 A

Drain-Source Diode Forward Voltage

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -2.3 A,

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- -5.0 V

-- 110 -- ns

Rev. A, May 2001

Typical Characteristics

FQT2P25

V

GS

Top : -1 5 .0 V

-10.0 V

-8.0 V

0

10

-7.0 V

-6.5 V

-6.0 V
Botto m : -5.5 V

-1

10

, Dra in Curre n t [A ]

D

-I

-1

10

0

10

※

Note s :

1. 250μs Pulse Test
= 25

2. T

C

1

10

-VDS, Drain-Source Voltage [V]

15

12

9

[Ω],

DS(on)

R

6

Drain-Source On-Resistance

3

0

0.0 1.5 3.0 4.5 6.0

VGS = - 20V

VGS = - 10V

※

Note : T

-ID , Drai n Curren t [A]

0

10

℃

, Dra in C u rr en t [A ]

D

-I

℃

-1

10

246810

150

℃

25

℃

-55

※

Notes :

1. V

= -40V

DS

2. 250μs Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

℃

, Reverse Drain Current [A]

150

DR

-I

℃

= 25

J

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

℃

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Test

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

400

300

200

Capacitance [pF]

100

0

-1

10

C

iss

C

oss

C

rss

0

10

= C

rss

gd

※

Note s :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

-VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

012

QG, Tota l Gate Charge [n C]

VDS = -50V

VDS = -125V

VDS = -200V

※

Note : I

34567

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= -2.3 A

D

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation