Fairchild FQT1N80 service manual

FQT1N80TF_WS

D

G

S

SOT-223

FQT Series

G

D

S

N-Channel MOSFET

800V, 0.2A, 20Ω

FQT1N80TF_WS N-Channel MOSFET

August 2011

®

QFET

Features

• R

• Low gate charge ( Typ. 5.5nC)

• Low Crss ( Typ. 2.7pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns

P

D

TJ, T

T

L

= 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A

DS(on)

= 25oC unless otherwise noted*

C

Symbol Parameter FQT1N80TF_WS Units

Drain to Source Voltage 800 V

Gate to Source Voltage ±30 V

-Continuous (TC = 25oC) 0.2

-Continuous (TC = 100oC) 0.12

(TC = 25oC) 2.1 W

- Derate above 25oC 0.02 W/oC

STG

Drain Current

Drain Current - Pulsed (Note 1) 0.8 A

Single Pulsed Avalanche Energy (Note 2) 90 mJ

Avalanche Current (Note 1) 0.2 A

Repetitive Avalanche Energy (Note 1) 0.2 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

o

300

o

A

C

C

Thermal Characteristics

Symbol Parameter

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2011 Fairchild Semiconductor Corporation
FQT1N80TF_WS Rev. C0

Thermal Resistance, Junction to Ambient* - 60

Min. Max.

www.fairchildsemi.com1

Units

o

C/W

FQT1N80TF_WS N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FQT1N80 FQT1N80TF_WS SOT-223 330mm 12mm 4000

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 800 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

ID = 250µA, Referenced to 25oC - 0.8 - V/oC

VDS = 800V, V

= 0V - - 25

GS

VDS = 640V, TC = 125oC - - 250

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 V

Static Drain to Source On Resistance VGS = 10V, I

= 0.1A - 15.5 20 Ω

D

Forward Transconductance VDS = 40V, ID = 0.1A (Note 4) - 0.75 - S

Input Capacitance

Output Capacitance - 20 30 pF

Reverse Transfer Capacitance - 2.7 5.0 pF

VDS = 25V, VGS = 0V
f = 1MHz

Total Gate Charge at 10V

Gate to Source Gate Charge - 1.1 - nC

Gate to Drain “Miller” Charge - 3.3 - nC

VDS = 640V, ID = 1A
VGS = 10V

(Note 4, 5)

- 150 195 pF

- 5.5 7.2 nC

µA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 25 60 ns

Turn-Off Delay Time - 15 40 ns

Turn-Off Fall Time - 25 60 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 170mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 1A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A

Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.6 - µC

, Starting TJ = 25°C

DSS

VDD = 400V, ID = 1A
RG = 25Ω

(Note 4, 5)

= 0V, I

GS

VGS = 0V, I

= 0.2A - - 1.4 V

SD

= 1A

SD

dIF/dt = 100A/µs (Note 4)

- 10 30 ns

- 300 - ns

FQT1N80TF_WS Rev. C0

2

www.fairchildsemi.com

Typical Performance Characteristics

10

-1

10

0

10

1

10

-2

10

-1

10

0

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

Notes :※

1. 250µs Pulse Test

2. TC = 25℃

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

2 4 6 8 10

10

-1

10

0

150oC

25oC

-55oC

Notes :※

1. VDS = 50V

2. 250µ s Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

10

20

30

40

50

VGS = 20V

VGS = 10V

Note : T※J = 25℃

R

DS(ON)

[Ω ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2

10

-1

10

0

150℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

25℃

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

50

100

150

200

250

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 1 2 3 4 5 6

0

2

4

6

8

10

12

VDS = 400V

VDS = 160V

VDS = 640V

Note : I※D = 1.0 A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FQT1N80TF_WS N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FQT1N80TF_WS Rev. C0

3

www.fairchildsemi.com