Fairchild FQT1N60C service manual

FQT1N60C

N-Channel MOSFET

600V, 0.2A, 11.5Ω

FQT1N60C N-Channel MOSFET

November 2007

®

QFET

Features

•R

• Low gate charge ( Typ. 4.8nC)

• Low Crss ( Typ. 3.5pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

T

L

= 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A

DS(on)

D

S

G

SOT-223

FQT Series

o

= 25

C unless otherwise noted*

C

Symbol Parameter FQT1N60C Units

Drain to Source Voltage 600 V

Gate to Source Voltage ±30 V

-Continuous (T

-Continuous (T

(T

= 25oC) 2.1 W

C

- Derate above 25

STG

D r a i n C u r r e n t

D r a i n C u r r e n t - P u l s e d (Note 1) 0.8 A

Single Pulsed Avalanche Energy (Note 2) 33 mJ

Avalanche Current (Note 1) 0.2 A

Repetitive Avalanche Energy (Note 1) 0.2 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

D

G

S

= 25oC) 0.2

C

= 100oC) 0.12

C

o

C0.02W/

300

o

o

A

o

C

C

C

Thermal Characteristics

Symbol Parameter

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. A

Thermal Resistance, Junction to Ambient* - 60

Min. Max.

Units

o

C/W

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FQT1N60C N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FQT1N60C FQT1N60C SOT-223 330mm 12mm 4000

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.6-V/

D

V

= 600V, V

DS

= 480V, TC = 125oC - - 250

V

DS

= 0V - - 25

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.0-4.0V

Static Drain to Source On Resistance VGS = 10V, ID = 0.1A - 9.3 11.5 Ω

Forward Transconductance VDS = 40V, ID = 0.1A (Note 4) -0.75- S

Input Capacitance

Output Capacitance - 19 25 pF

Reverse Transfer Capacitance - 3.5 6 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 480V, ID = 1A

Gate to Source Gate Charge - 0.7 - nC

Gate to Drain “Miller” Charge - 2.7 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 130 170 pF

-4.86.2nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 21 52 ns

Turn-Off Delay Time - 13 36 ns

Turn-Off Fall Time - 27 64 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 59mH, IAS = 1.1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 0.2A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A

Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.53 - µC

, Starting TJ = 25°C

DSS

= 300V, ID = 1A

V

DD

R

= 25Ω

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Not e 4)

F

= 0.2A - - 1.4 V

SD

= 1A

SD

- 7 24 ns

- 190 - ns

FQT1N60C Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

0

6.5 V

10

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

-1

10

, Drain Current [A]

D

I

Notes :※

1. 250µ s Pulse Test

= 25℃

2. T

-2

10

-1

10

0

10

C

1

10

VDS, Drai n-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

30

0

10

150oC

-55oC

25oC

, Drain Current [A]

D

I

Notes :※

1. VDS = 40V

-1

10

246810

2. 250µ s Pulse Test

VGS, Gate-Source Voltage [V]

FQT1N60C N-Channel MOSFET

25

VGS = 10V

20

[Ω ],

15

DS(ON)

R

10

Drain-Source On-Resistance

5

0

0.00.51.01.52.02.5

VGS = 20V

Note : T※J = 25℃

ID, Drain Current [A]

0

10

150

℃

Notes :

※

25

℃

, Reverse Drain Current [A]

-1

DR

10

I

0.2 0.4 0.6 0.8 1.0 1.2 1.4

1. VGS = 0V

2. 250µ s Pulse Test

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

250

200

C

iss

150

C

oss

100

Capacitance [pF]

C

50

0

-1

10

rss

0

10

C

= Cgs + Cgd (Cds = short ed)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

Note s ;※

1. VGS = 0 V

2. f = 1 MHz

1

10

VDS, Drai n-Source Voltage [V]

12

10

VDS = 120V

VDS = 300V

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0123456

VDS = 480V

Note : I※D = 1A

QG, Total Gate Charge [nC]

FQT1N60C Rev. A

3

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