FQT1N60C
N-Channel MOSFET
600V, 0.2A, 11.5Ω
FQT1N60C N-Channel MOSFET
November 2007
®
QFET
Features
•R
• Low gate charge ( Typ. 4.8nC)
• Low Crss ( Typ. 3.5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
= 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A
DS(on)
D
S
G
SOT-223
FQT Series
o
= 25
C unless otherwise noted*
C
Symbol Parameter FQT1N60C Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 2.1 W
C
- Derate above 25
STG
D r a i n C u r r e n t
D r a i n C u r r e n t - P u l s e d (Note 1) 0.8 A
Single Pulsed Avalanche Energy (Note 2) 33 mJ
Avalanche Current (Note 1) 0.2 A
Repetitive Avalanche Energy (Note 1) 0.2 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
= 25oC) 0.2
C
= 100oC) 0.12
C
o
C0.02W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. A
Thermal Resistance, Junction to Ambient* - 60
Min. Max.
Units
o
C/W
www.fairchildsemi.com1
FQT1N60C N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FQT1N60C FQT1N60C SOT-223 330mm 12mm 4000
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250µA, Referenced to 25oC-0.6-V/
D
V
= 600V, V
DS
= 480V, TC = 125oC - - 250
V
DS
= 0V - - 25
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250µA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 0.1A - 9.3 11.5 Ω
Forward Transconductance VDS = 40V, ID = 0.1A (Note 4) -0.75- S
Input Capacitance
Output Capacitance - 19 25 pF
Reverse Transfer Capacitance - 3.5 6 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 480V, ID = 1A
Gate to Source Gate Charge - 0.7 - nC
Gate to Drain “Miller” Charge - 2.7 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 130 170 pF
-4.86.2nC
µA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 21 52 ns
Turn-Off Delay Time - 13 36 ns
Turn-Off Fall Time - 27 64 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 59mH, IAS = 1.1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 0.2A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A
Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.53 - µC
, Starting TJ = 25°C
DSS
= 300V, ID = 1A
V
DD
R
= 25Ω
G
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/µs (Not e 4)
F
= 0.2A - - 1.4 V
SD
= 1A
SD
- 7 24 ns
- 190 - ns
FQT1N60C Rev. A
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
0
6.5 V
10
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
-1
10
, Drain Current [A]
D
I
Notes :※
1. 250µ s Pulse Test
= 25℃
2. T
-2
10
-1
10
0
10
C
1
10
VDS, Drai n-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
30
0
10
150oC
-55oC
25oC
, Drain Current [A]
D
I
Notes :※
1. VDS = 40V
-1
10
246810
2. 250µ s Pulse Test
VGS, Gate-Source Voltage [V]
FQT1N60C N-Channel MOSFET
25
VGS = 10V
20
[Ω ],
15
DS(ON)
R
10
Drain-Source On-Resistance
5
0
0.00.51.01.52.02.5
VGS = 20V
Note : T※J = 25℃
ID, Drain Current [A]
0
10
150
℃
Notes :
※
25
℃
, Reverse Drain Current [A]
-1
DR
10
I
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1. VGS = 0V
2. 250µ s Pulse Test
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
250
200
C
iss
150
C
oss
100
Capacitance [pF]
C
50
0
-1
10
rss
0
10
C
= Cgs + Cgd (Cds = short ed)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
Note s ;※
1. VGS = 0 V
2. f = 1 MHz
1
10
VDS, Drai n-Source Voltage [V]
12
10
VDS = 120V
VDS = 300V
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0123456
VDS = 480V
Note : I※D = 1A
QG, Total Gate Charge [nC]
FQT1N60C Rev. A
3
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
1.1
3.0
2.5
2.0
FQT1N60C N-Channel MOSFET
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 - 50 0 50 100 15 0 200
Notes :※
1. VGS = 0 V
2. I
= 250 µ A
D
TJ, Juncti on Temperatur e [oC]
1.5
, (Normalized)
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junct ion Temperature [oC]
Notes :※
1. VGS = 10 V
2. I
= 0.1 A
D
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
, Drain Current [A]
D
I
Operation i n This Area
is Li mited by R
0
10
DS(on)
100 µs
1 ms
1 s
10 ms
100 ms
-1
10
DC
-2
10
-3
10
0
10
1. TC = 25 oC
2. T
3. Singl e Pulse
1
10
Note s :※
= 150 oC
J
2
10
3
10
0.20
0.18
0.16
0.14
0.12
0.10
0.08
, Drain Current [A]
0.06
D
I
0.04
0.02
0.00
25 50 75 100 125 150
VDS, Drai n-Source Vol tage [ V]
TC, Case Temperature [°C]
Figure 11. Transient Thermal Response Curve
No tes :※
1. Z
(t) = 6 0 /W M ax.℃
θ JC
2. D uty Fa cto r, D= t1/t
3. TJM - TC = PDM * Z
P
DM
t
1
t
2
-2
-1
10
0
10
1
10
4
FQT1N60C Rev. A
2
10
D=0.5
0.2
1
10
0.1
0.05
0.02
0
10
0.01
(t), Thermal Response
θ JC
Z
-1
10
-5
10
10
-4
single pulse
-3
10
10
t1, Square Wave Pulse Duration [sec]
2
(t)
θ JC
2
10
3
10
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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FQT1N60C N-Channel MOSFET
FQT1N60C Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
g
g
+
+
V
V
DS
DS
_
_
L
LL
Sam e Type
Sam e Type
as DU T
as DU T
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontrolled by pulse period
•ISDcontrolled by pulse period
G
G
V
V
GS
GS
R
R
G
G
DUT
DUT
I
I
SD
SD
Driver
Driver
V
V
DD
DD
FQT1N60C N-Channel MOSFET
V
V
GS
GS
( D riv er )
( D riv er )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
G ate P ulse W idth
G ate P ulse W idth
G ate P ulse W idth
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, B ody Diode Forw ard C urrent
IFM, B ody Diode Forw ard C urrent
I
I
RM
RM
Body D iode R everse C urrent
Body D iode R everse C urrent
Body D iode R ecovery dv/dt
Body D iode R ecovery dv/dt
V
V
SD
SD
Body Diode
Body Diode
e D rop
Forward Volta
Forward Volta
e D rop
di/dt
di/dt
10V
10V
V
V
DD
DD
FQT1N60C Rev. A
6
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Mechanical Dimensions
1
FQT1N60C N-Channel MOSFET
SOT-223
3.00 ±0.10
2.30 TYP
(0.95) (0.95)
4.60 ±0.25
0.70 ±0.10
MAX1.80
±0.20
1.75
±0.20
3.50
(0.60) (0.60)
0.25
+0.10
–0.05
0.08MAX
0.65 ±0.20
+0.04
0.06
–0.02
0°~10°
7.00 ±0.30
6.50 ±0.20
.60 ±0.20
(0.46)
(0.89)
FQT1N60C Rev. A
7
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FQT1N60C N-Channel MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
FQT1N60C Rev. A
8
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