Fairchild FQT13N06L service manual

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FQT13N06L

60V LOGIC N-Channel MOSFET

FQT13N06L

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching

Features

• 2.8A, 60V, R

• Low gate charge ( typical 4.8 nC)

• Low Crss ( typical 17 pF)

• Fast switching

• Improved dv/dt capability

= 0.11Ω @VGS = 10 V

DS(on)

performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.

D

!

!

!

!

"

"

"

"

"

"
"

"

!

!

S

D

G

Absolute Maximum Ratings T

S

SOT-223

FQT Series

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQT13N06L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 60 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 70°C)

C

(Note 1)

2.8 A

2.24 A

11.2 A
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

85 mJ

2.8 A

0.21 mJ

7.0 V/ns

2.1 W

- Derate above 25°C 0.017 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Ambient * -- 60 °C/W

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation

FQT13N06L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 60 V, VGS = 0 V

DS

V

= 48 V, TC = 125°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

60 -- -- V

-- 0.05 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 1.4 A

GS

= 5 V, ID = 1.4 A

V

GS

V

= 25 V, ID = 1.4 A

DS

(Note 4)

1.0 -- 2.5 V

----0.088

0.110

0.11

0.14

-- 4.1 - - S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 95 125 pF
Reverse Transfer Capacitance -- 17 23 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 270 350 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 90 190 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 40 90 ns
Total Gate Charge
Gate-Source Charge -- 1.6 -- nC
Gate-Drain Charge -- 2.7 -- nC

= 30 V, ID = 6.8 A,

V

DD

= 25 Ω

R

G

= 48 V, ID = 13.6 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 8 25 ns

-- 4.8 6.4 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 12.6mH, IAS = 2.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 13.6A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A

= 0 V, IS = 2.8 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 45 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 13.6 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 45 -- ns

(Note 4)

Rev. A, May 2001

Typical Characteristics

FQT13N06L

1

V

10

, Drain Current [A]

D

I

10

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V
Botto m : 3.0 V

0

-1

10

GS

!

Note s :

1. 25 0#s Pulse Test

"

= 25

2. T

C

0

10

1

10

VDS, Drain-Source Voltage [V]

250

200

],

150

$

[m

DS(ON)

100

R

50

Drain-Source On-Resistance

0

VGS = 5V

VGS = 10V

0 10203040

!

"

Note : T

= 25

J

ID, Drain C u rr en t [A]

1

10

0

10

"

150

, Dra in Curre n t [A ]

D

I

"

25

-1

10

0246810

!

"

-55

Notes :

= 25V

1. V

DS

2. 25 0#s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

"

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

VSD, Source-Drain voltage [V]

"

25

!

Note s :

1. V

= 0V

GS

2. 25 0#s Pulse Test

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 30V

VDS = 48V

!

Note : I

800

600

400

Capacitance [pF]

200

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

!

Note s :

= 0 V

1. V

GS

2. F = 1 MHz

C

iss

C

oss

C

rss

0

10

1

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0246810

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

= 13.6A

D

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation