Fairchild FQS4900 service manual

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August 2000

FQS4900

FQS4900

Dual N & P-Channel, Logic Level MOSFET

General Description

These dual N and P-channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. This device is well
suited for high interface in telephone sets.

D2

D2

D1

D1

S1

G1

S2

G2

QFET

QFET

QFETQFET

Features

• N-Channel 1.3A, 60V, R
R
P-Channel -0.3A, -300V, R
R

• Low gate charge ( typical N-Channel 1.6 nC)
( typical P-Channel 3.6 nC)

• Fast switching

• Improved dv/dt capability

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5

6

7

8

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= 0.55 Ω @ VGS = 10 V

DS(on)

= 0.65 Ω @ VGS = 5 V

DS(on)

= 15.5 Ω @ VGS = -10 V

DS(on)

= 16 Ω @ VGS =- 5 V

DS(on)

#

#

4

3

2

1

TM

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter N-Channel P-Channel Units

V

DSS

I

D

I

DM

V

GSS

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

Drain-Source Voltage 60 -300 V
Drain Current

- Continuous (T

- Continuous (T

Drain Curent - Pulsed

= 25°C)

A

= 70°C)

A

(Note 1)

1.3 -0.3 A

0.82 -0.19 A

5.2 -1.2 A

Gate-Source Voltage ± 20 V

Power Dissipation (TA = 25°C)

= 70°C)

(T

A

(Note 2)

7.0 4.5 V/ns

2.0 W

1.3 W

Operating and Storage Temperature Range -55 to +150 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, August 2000

FQS4900

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse

V

GS

V

= 0 V, ID = -250 µA

GS

= 60 V, VGS = 0 V

V

DS

V

= 48 V, TC = 55°C

DS

= -300 V, VGS = 0 V

V

DS

V

= -240 V, TC = 55°C

DS

= 20 V, VDS = 0 V

V

GS

V

= -20 V, VDS = 0 V

GS

N-Ch 60 -- -- V
P-Ch -300 -- -- V

N-Ch

P-Ch

-- -- 1 µA

-- -- 10 µA

-- -- -1 µA

-- -- -10 µA
All -- -- 100 nA
All -- -- -100 nA

= 0 V, ID = 250 µA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

= 4V, ID = 20 mA

DS

= 4V, ID = -20 mA

V

DS

= 10 V, ID = 0.65 A

V

GS

V

= 5 V, ID = 0.65 A

GS

V

= -10 V, ID = -0.15 A

GS

= -5 V, ID = -0.15 A

V

GS

V

= 10 V, ID = 0.65 A

DS

= -10 V, ID = -0.15 A

V

DS

N-Ch 1.0 -- 1.95 V
P-Ch -1.0 -- -1.95 V

N-Ch

P-CH

-- 0.39 0.55 Ω

-- 0.46 0.65 Ω

-- 11.2 15.5 Ω

-- 11.4 16 Ω

N-CH -- 1.7 -- S
P-CH -- 0.6 -- S

V

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

g

gs

Total Gate Charge

Gate-Source Charge

N-Channel
V

= 30 V, ID = 1.3 A,

DD

= 25 Ω

R

G

P-Channel

= -150 V, ID = -0.3 A,

V

DD

R

= 25 Ω

G

N-Channel

= 48 V, ID = 1.3 A,

V

DS

V

= 5 V

GS

P-Channel
V

= -240 V, ID = -0.3 A,

gd

Gate-Drain Charge

V

DS
GS

= -5 V

N-Ch -- 5.7 21 ns
P-Ch -- 10 30 ns
N-Ch -- 21 50 ns
P-Ch -- 25 60 ns
N-Ch -- 11 32 ns
P-Ch -- 35 80 ns
N-Ch -- 17 45 ns
P-Ch -- 47 105 ns
N-Ch -- 1.6 2.1 nC
P-Ch -- 3.6 4.7 nC
N-Ch -- 0.28 -- nC
P-Ch -- 0.42 -- nC
N-Ch -- 0.82 -- nC
P-Ch -- 2.1 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

3. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

4. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current

= 0 V, IS = 1.3 A

Drain-Source Diode Forward Voltage

V

GS

V

= 0 V, IS = -0.3 A

GS

N-Ch -- -- 1.3 A
P-Ch -- -- -0.3 A
N-Ch -- -- 1.5 V

P-Ch -- -- -4.0 V

Rev. A, August 2000

Typical Characteristics : N-Channel

FQS4900

, Drain Current [A]

D

I

10

0

10

-1

-1

10

V
Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V
Bottom : 3.0 V

GS

VDS, Drain-Source Voltage [V]

!

Notes :

1. 250#s Pulse Test
= 25

2. T

C

0

10

0

10

"

"

1

10

150

"

25

, Dra i n Current [A]

D

I

-1

10

0246810

-55

VGS, Gate-Source Voltage [V]

"

!

Notes :

1. V

= 25V

DS

2. 250#s Pulse Tes t

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2.0

1.5

],

$

[

1.0

DS(ON)

R

0.5

VGS = 5V

VGS = 10V

Drain-Source On-Resistance

!

"

Note : T

= 25

0.0
02468

J

ID, Drain Current [A]

0

10

"

150

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VSD, Sou r c e-Dra i n volta g e [V]

"

25

!

Notes :

= 0V

1. V

GS

2. 250#s Pulse Test

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

160

120

80

Capacitance [pF]

40

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge C haracteristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

!

Notes :

= 0 V

1. V

GS

2. f = 1 MH z

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS = 30V

VDS = 48V

QG, Tota l Gate Cha rg e [nC]

!

Note : I

= 1.3 A

D

Rev. A, August 2000