Fairchild FQS4410 service manual

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May 2000

FQS4410

FQS4410

Single N-Channel, Logic Level, Power MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.

Features

• 10A, 30V, R

• Low gate charge ( typical 21 nC)

• Low Crss ( typical 145 pF)

• Fast switching

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.0135Ω @VGS = 10 V

DS(on)

8

7

6

QFET

QFET

QFETQFET

4

3

2

TM

5

Absolute Maximum Ratings T

Symbol Parameter FQS4410 Units

V

DSS

I

D

I

DM

V

GSS

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

Drain-Source Voltage 30 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 20 V

Power Dissipation (TC = 25°C)
Linear Derating Factor 0.02 W/°C
Operating and Storage Temperature Range -55 to +175 °C

- Continuous (T

- Continuous (T

= 25°C unless otherwise noted

C

= 25°C)

C

= 70°C)

C

(Note 1)

(Note 3)

10 A

8A

50 A

7.0 V/ns

2.5 W

1

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

Thermal Resistance, Junction-to-Ambient -- 50 °C/W

©2000 Fairchild Semiconductor International

Rev. A, May 2000

FQS4410

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to

I

D

25°C
V

= 30 V, VGS = 0 V

DS

V

= 24 V, TC = 125°C

DS

= 20 V, VDS = 0 V

V

GS

V

= -20 V, VDS = 0 V

GS

30 -- -- V

-- 0.03 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 10 A

V

GS

V

= 4.5 V, ID = 5 A

GS

= 10 V, ID = 5 A

V

DS

(Note 4)

1.0 -- 2.5 V

--

--

--

--

-- 16 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 590 770 pF
Reverse Transfer Capacitance -- 145 190 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 980 1280 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 165 340 ns
Turn-Off Delay Time -- 65 140 ns
Turn-Off Fall Time -- 110 23 0 ns
Total Gate Charge
Gate-Source Charge -- 4.2 -- nC
Gate-Drain Charge -- 12 -- nC

V

= 15 V, ID = 5 A,

DD

R

= 50 Ω

G

= 24 V, ID = 10 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 30 70 ns

-- 21 28 nC

0.0135

0.02

Unit

s

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 3mH, IAS = 10A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 10A, di/dt ≤ 300A/us, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.3 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 50 A

= 0 V, IS = 2.3 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 45 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 24 A,

V

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- 1.1 V

-- 45 -- ns

Rev. A, May 2000

Typical Characteristics

FQS4410

1

10

, Drain Current [A]

D

I

0

10

-1

10

VDS, Drain-Source Voltage [V]

Figure 1. Output Characte ri st ic s

※

Not e :

1. 250μs Pulse Test

℃

= 25

2. T

C

0

10

V
Top : 10 .0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V
Bottom : 3.0 V

GS

1

10

℃

150

℃

25

0

10

, Drain Current [A]

D

I

-1

10

2.0 2.5 3.0 3.5 4.0

VGS, Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

※

Note

1. V

= 10V

℃

-55

DS

2. 250μs Pulse Test

40

30

],

Ω

20

[m

DS(ON)

R

10

Drain-Source On-Resistance

0

0 1020304050

VGS = 4.5V

VGS = 10V

※

Note : T

J

ID, Drain Current [A]

= 25

℃

1

10

0

10

※

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

℃

25

Not e :

= 0V

1. V

GS

2. 250μs Pul se Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

VDS, Drain-Source Voltage [V]

C

iss

C

oss

C

rss

C

oss

C

iss

C

rss

0

10

Figure 5. Capacitance vs. Drai n-Source Voltage

©2000 Fairchild Semiconductor International

= Cgs + Cgd (Cds = shorted)

= Cds + C

gd

= C

gd

※

Note ;

= 0 V

1. V

GS

2. f = 1 MHz

1

10

Figure 4. Source-Drain Diode Forward Voltage

12

10

VDS = 15V

VDS = 24V

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 5 10 15 20 25 30 35 40

QG, Total Gate Charge [nC]

Figure 6. Gate Charge vs. Gate-Source Voltage

※

Note : I

= 10A

D

Rev. A, May 2000