Fairchild FQPF9P25 service manual
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FQPF9P25
250V P-Channel MOSFET
December 2000
QFET
QFET
QFETQFET
FQPF9P25
TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
Features
• -6.0A, -250V, R
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.62Ω @VGS = -10 V
DS(on)
well suited for high efficiency switching DC/DC converters.
S
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D
GSD
Absolute Maximum Ratings T
TO-220F
FQPF Series
= 25°C unless otherwise noted
C
G
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Symbol Parameter FQP9P25 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -250 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-6.0 A
-3.9 A
-24 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
650 mJ
-6.0 A
5.0 mJ
-5.5 V/ns
50 W
- Derate above 25°C 0.4 W/°C
T
, T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 2.5 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Rev. A2, December 2000
FQPF9P25
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = -250 µA
V
GS
I
= -250 µA, Referenced to 25°C
D
V
= -250 V, VGS = 0 V
DS
V
= -200 V, TC = 125°C
DS
V
= -30 V, VDS = 0 V
GS
= 30 V, VDS = 0 V
V
GS
-250 -- -- V
-- -0.2 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -3.0 A
V
GS
= -40 V, ID = -3.0 A
V
DS
(Note 4)
-3.0 -- -5.0 V
-- 0.48 0.62 Ω
-- 4.8 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 170 220 pF
Reverse Transfer Capacitance -- 27 35 p F
= -25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 910 1180 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 150 310 ns
Turn-Off Delay Time -- 45 100 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge
Gate-Source Charge -- 7.6 -- nC
Gate-Drain Charge -- 14 -- nC
= -125 V, ID = -9.4 A,
V
DD
= 25 Ω
R
G
V
= -200 V, ID = -9.4 A,
DS
V
GS
= -10 V
(Note 4, 5)
(Note 4, 5)
-- 20 50 ns
-- 29 38 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 28.9mH, IAS = -6.0A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -9.4A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- -6.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -24 A
= 0 V, IS = -6.0 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.45 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = -9.4 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- -5.0 V
-- 190 -- ns
(Note 4)
Rev. A2, December 2000
Typical Characteristics
FQPF9P25
V
GS
Top : -15.0 V
-10.0 V
1
10
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
0
10
, Drain Current [A]
D
-I
-1
10
-1
10
0
10
※
Notes :
1. 250μs Pulse Test
℃
2. T
= 25
C
1
10
-VDS, Drain-Source Voltage [V]
VGS = - 10V
VGS = - 20V
℃
※
Note : T
= 25
J
2.0
1.5
],
Ω
[
1.0
DS(on)
R
0.5
Drain-Source On-Resistance
0.0
0 10203040
-ID , Drai n Curren t [A]
1
10
℃
0
10
, Drain Current [A]
D
-I
-1
10
246810
150
℃
25
-55
※
Notes :
1. V
℃
= -50V
DS
2. 250μs Pulse Test
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
0
10
※
, Reverse Drain Current [A]
DR
-I
-1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
℃
150
℃
25
Notes :
= 0V
1. V
GS
2. 250μs Pulse Tes t
-VSD , Sou r c e-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2400
2000
1600
1200
800
Capacitance [pF]
400
0
-1
10
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
©2000 Fairchild Semiconductor International
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iss
C
oss
C
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C
iss
C
oss
C
rss
0
10
-VDS, Drain-Source Voltage [V]
= Cgs + Cgd (Cds = shorted)
= Cds + C
gd
= C
gd
※
Notes :
1. V
= 0 V
GS
2. f = 1 MHz
1
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = -50V
VDS = -125V
VDS = -200V
※
Note : I
= -9.4 A
D
Rev. A2, December 2000
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
0 5 10 15 20 25 30 35
QG, Tota l Gate Charge [n C]
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