Fairchild FQPF9N50CF service manual

FQPF9N50CF

500V N-Channel MOSFET

FQPF9N50CF 500V N-Channel MOSFET

December 2005

TM

FRFET

Features

• 9A, 500V, R

• Low gate charge (typical 28 nC)

• Low Crss (typical 24pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode (typical 100ns)

= 0.85Ω @VGS = 10 V

DS(on)

GSD

TO-220F

FQPF Series

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­ciency switched mode power supplies, active power factor cor­rection, electronic lamp ballasts based on half bridge topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FQPF9N50CF Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

* Drain current limited by maximum junction temperature

Drain-Source Voltage 500 V

Drain Current - Continuous (TC = 25°C) 9* A

- Continuous (T

Drain Current - Pulsed
Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 44 W

- Derate above 25°C 0.35 W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 5.4* A

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

36* A

360 mJ

9A

4.4 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FQPF9N50CF Units

R

θJC

R

θJA

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQPF9N50CF Rev. A

Thermal Resistance, Junction-to-Case 2.86 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQPF9N50CF FQPF9N50CF TO-220F -- -- 50

FQPF9N50CF 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 8mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

* Current limited by maximum junction temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.57 -- V/°C

Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µA

= 400 V, TC = 125°C -- -- 100 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A -- 0.70 0.85 Ω

Forward Transconductance VDS = 40 V, ID = 4.5 A (Note 4) -- 6.5 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 130 170 pF

f = 1.0 MHz

-- 790 1030 pF

Reverse Transfer Capacitance -- 24 30 pF

Turn-On Delay Time VDD = 250 V, ID = 9A,

R

= 25 Ω

Turn-On Rise Time -- 65 140 ns

G

-- 18 45 ns

Turn-Off Delay Time -- 93 195 ns

Turn-Off Fall Time -- 64 125 ns

Total Gate Charge VDS = 400 V, ID = 9A,

V

= 10 V

Gate-Source Charge -- 4 -- nC

Gate-Drain Charge -- 15 -- nC

GS

(Note 4, 5)

(Note 4, 5)

-- 28 35 nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 9* A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 36* A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 9 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 0.3 -- µC

Starting TJ = 25°C

DSS,

F

-- 100 -- ns

FQPF9N50CF Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQPF9N50CF 500V N-Channel MOSFET

1

10

0

10

, Drain Current [A]

D

I

-1

10

10

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

-1

GS

0

10

VDS, Drain-Source Voltage [V]

1

10

150oC

Notes :※

1. 250µ s Pul se Test

2. T

= 25℃

C

1

10

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Source Volt age [V]

-55oC

Notes :※

1. VDS = 40V

2. 250µ s Pul se Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

2.0

VGS = 10V

1.5

[Ω ],

1.0

DS(ON)

R

VGS = 20V

1

10

0

10

Drain-Source On-Resistance

0.5

0 5 10 15 20 25

Note : T※J = 25℃

ID, Drain Current [ A]

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0 .8 1. 0 1.2 1.4

150℃

25℃

VSD, Source-Drain voltage [V]

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2000

1600

1200

800

Capacitance [pF]

400

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

1

10

Notes ;※

1. VGS = 0 V

2. f = 1 MHz

C

rss

0

-1

10

0

10

VDS, Drain-Source Vol tage [ V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Total Gate Charge [nC]

VDS = 100V

VDS = 250V

VDS = 400V

Note : I※D = 9A

FQPF9N50CF Rev. A

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