Fairchild FQPF9N30 service manual

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FQPF9N30

FQPF9N30

300V N-Channel MOSFET

May 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQPF9N30 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 300 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.34 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 6.0A, 300V, R

• Low gate charge ( typical 17 nC)

• Low Crss ( typical 16 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.45Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

6.0 A

3.8 A
24 A

420 mJ

6.0 A

4.2 mJ

4.5 V/ns
42 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 2.98 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, May 2000

FQPF9N30

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 300 V, VGS = 0 V

DS

V

= 240 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

300 -- -- V

-- 0.28 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 3.0 A

V

GS

= 50 V, ID = 3.0 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.35 0.45 Ω

-- 4.2 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 120 155 pF
Reverse Transfer Capacitance -- 16 20 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 570 740 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 120 250 ns
Turn-Off Delay Time -- 27 65 ns
Turn-Off Fall Time -- 48 110 ns
Total Gate Charge
Gate-Source Charge -- 3.9 -- nC
Gate-Drain Charge -- 9.2 -- nC

= 150 V, ID = 9.0 A,

V

DD

= 25 Ω

R

G

V

= 240 V, ID = 9.0 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 16 40 ns

-- 17 22 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 19.4mH, IAS = 6.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 9.0A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 6.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A

= 0 V, IS = 6.0 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.4 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 9.0 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 170 -- ns

(Note 4)

Rev. A, May 2000

Typical Characteristics

FQPF9N30

V

GS

Top : 15.0 V

1

10.0 V

10

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

2. T

10

VDS, Drain-Source Voltage [V]

2.5

2.0

],

Ω

1.5

[

DS(on)

R

1.0

Drain-Source On-Resistance

0.5

0.0
0 6 12 18 24 30

VGS = 10V

VGS = 20V

ID , Drain Curren t [A]

※

= 25

C

1

Note : T

1

10

℃

℃

0

10

, Dra i n Current [A]

D

I

-1

10

246810

150

℃

25

℃

-55

※

Notes :

= 50V

1. V

DS

2. 250μs Pulse Tes t

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

= 25

J

℃

0

10

, Reverse Drain Current [A]

DR

I

-1

10

℃

℃

150

25

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Tes t

VSD, Sou r c e -Drain v o ltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

1200

1000

800

600

400

Capacitance [pF]

200

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Notes :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0369121518

QG, Tota l Gate Charge [n C]

VDS = 60V

VDS = 150V

VDS = 240V

※

Note : I

= 9.0 A

D

Rev. A, May 2000