Fairchild FQPF9N08L service manual

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FQPF9N08L

80V LOGIC N-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQPF9N08L

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter FQPF9N08L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 80 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.15 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 7.0A, 80V, R

• Low gate charge ( typical 4.7 nC)

• Low Crss ( typical 16 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• Low level gate drive requirements allowing
direct operation from logic drives

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.21Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

7.0 A

4.95 A
28 A

55 mJ

7.0 A

2.3 mJ

6.5 V/ns
23 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 6.52 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A2, December 2000

FQPF9N08L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 80 V, VGS = 0 V

DS

V

= 64 V, TC = 150°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

80 -- -- V

-- 0.08 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 3.5 A

GS

= 5 V, ID = 3.5 A

V

GS

V

= 25 V, ID = 3.5 A

DS

(Note 4)

1.0 -- 2.0 V

0.15

--

0.17

0.21

0.23

-- 4.75 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 70 90 pF
Reverse Transfer Capacitance -- 16 20 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 215 280 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 180 370 ns
Turn-Off Delay Time -- 13 35 ns
Turn-Off Fall Time -- 30 70 ns
Total Gate Charge
Gate-Source Charge -- 1.2 -- nC
Gate-Drain Charge -- 2.8 -- nC

= 40 V, ID = 9.3 A,

V

DD

= 25 Ω

R

G

= 64 V, ID = 9.3 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 6.5 23 ns

-- 4.7 6.1 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.54mH, IAS = 7.0A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 9.3A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 7.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 A

= 0 V, IS = 7.0 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 80 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 9.3 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 54 -- ns

(Note 4)

Rev. A2, December 2000

Typical Characteristics

FQPF9N08L

V

GS

Top : 10.0 V

8.0 V

1

6.0 V

10

5.0 V

4.5 V

4.0 V

3.5 V
Botto m : 3.0 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Tes t

2. T

VDS, Drain-Source Voltage [V]

0.8

0.6

],

Ω

[

0.4

DS(on)

R

0.2

Drain-Source On-Resistance

0.0
0 5 10 15 20 25

VGS = 5V

VGS = 10V

ID , Drain Curren t [A]

C

※

= 25

Note : T

1

10

℃

, Dra in Cu rrent [A]

D

I

℃

1

10

175

0

10

℃

25

-1

10

0246810

℃

-55

※

Notes :

1. V

= 25V

DS

2. 250μs Pulse Test

VGS , Gate - Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

= 25

J

℃

0

10

, Re verse Dra in Curre n t [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

℃

175

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 40V

VDS = 64V

※

Note : I

600

500

400

300

200

Capacitance [pF]

100

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

Notes :

= 0 V

1. V

10

1

GS

2. f = 1 MH z

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

012345678

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

= 9.3A

D

9

Rev. A2, December 2000©2000 Fairchild Semiconductor International