Fairchild FQPF8P10 service manual

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FQPF8P10

100V P-Channel MOSFET

FQPF8P10

TM

QFET

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQPF8P10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage -100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.19 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• -5.3A, -100V, R

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.53Ω @VGS = -10 V

DS(on)

D

S

-5.3 A

-3.8 A

-21.2 A

150 mJ

-5.3 A

2.8 mJ

-6.0 V/ns
28 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2002 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 5.36 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. B, August 2002

FQPF8P10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -100 V, VGS = 0 V

DS

V

= -80 V, TC = 150°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-100 -- -- V

-- -0.1 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -2.65 A

V

GS

= -40 V, ID = -2.65 A

V

DS

(Note 4)

-2.0 -- -4.0 V

-- 0.41 0.53 Ω

-- 3.9 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 120 155 pF
Reverse Transfer Capacitance -- 30 40 p F

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 360 470 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 110 230 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 35 80 n s
Total Gate Charge
Gate-Source Charge -- 3.0 -- nC
Gate-Drain Charge -- 6.4 -- nC

= -50 V, ID = -8.0 A,

V

DD

= 25 Ω

R

G

V

= -80 V, ID = -8.0 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 11 30 ns

-- 12 15 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 8.0mH, IAS = -5.3A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -8.0A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- -5.3 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -21.2 A

= 0 V, IS = -5.3 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.35 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -8.0 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -4.0 V

-- 98 -- ns

(Note 4)

Rev. B, August 2002

Typical Characteristics

V

GS

Top : -15.0 V

1

10

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-5.5 V

-5.0 V

0

10

Botto m : -4.5 V

-1

10

, Drain Current [A]

D

-I

-2

10

-1

10

0

10

-VDS, Drain-Source Voltage [V]

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

FQPF8P10

1

10

℃

175

0

10

, Drain Current [A]

D

-I

-1

10

2

℃

25

℃

-55

46810

※

Notes :

1. V

= -40V

DS

2. 250μs Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1.5

1.2

0.9

[Ω],

DS(on)

R

0.6

Drain-Source On-Resistance

0.3

0.0
0 5 10 15 20 25

VGS = - 10V

VGS = - 20V

※

-ID , Drain Curren t [A]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

900

800

700

600

500

400

300

Capacitance [pF]

200

100

0

-1

10

C

oss

C

iss

C

rss

-VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

C

= C

rss

0

10

10

Note : T

gd

1

℃

= 25

J

gd

※

Notes :

= 0 V

1. V

GS

2. f = 1 MH z

1

10

0

10

℃

25

℃

, Reve rs e D ra in Current [A ]

175

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

-VSD , Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

0 2 4 6 8 10 12 14

QG, Tota l Gate Charge [n C]

VDS = -20V

VDS = -50V

VDS = -80V

※

Note : I

= -8.0 A

D

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation

Rev. B, August 2002