Fairchild FQP8N80C, FQPF8N80C service manual

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FQP8N80C/FQPF8N80C

800V N-Channel MOSFET

FQP8N80C/FQPF8N80C

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 8A, 800V, R

• Low gate charge ( typical 35 nC)

• Low Crss ( typical 13 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.55Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies.

D

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S

G

SD

TO-220

FQP Series

Absolute Maximum Ratings T

D

G

S

= 25°C unless otherwise noted

C

TO-220F

FQPF Series

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!!!!

G

Symbol Parameter FQP8N80C FQPF8N80C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 800 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

88 *A

5.1 5.1 * A
32 32 * A

Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

850 mJ

8A

17.8 mJ

4.5 V/ns

178 59 W

- Derate above 25°C 1.43 0.48 W/°C

T

, T

J

STG

T

L

* Drain current limited by maximum junction temperature.

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FQP8N80C FQPF8N80C Units

R

θJC

R

θJS

R

θJA

©2003 Fairchild Semiconductor Corporation Rev. A, March 2003

Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

FQP8N80C/FQPF8N80C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 800 V, VGS = 0 V

DS

V

= 640 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

800 -- -- V

-- 0.5 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 4 A

V

GS

= 50 V , ID = 4 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.29 1.55 Ω

-- 5.6 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 135 175 pF
Reverse Transfer Capacitance -- 13 17 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1580 2050 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 110 230 ns
Turn-Off Delay Time -- 65 140 ns
Turn-Off Fall Time -- 70 150 ns
Total Gate Charge
Gate-Source Charge -- 10 -- nC
Gate-Drain Charge -- 14 -- nC

= 400 V, ID = 8 A,

V

DD

= 25 Ω

R

G

(Note 4, 5)

V

= 640 V, ID = 8 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 40 90 ns

-- 35 45 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2003 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A

= 0 V, IS = 8 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 8.2 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 8 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 690 -- ns

(Note 4)

Rev. A, March 2003

Typical Characteristics

FQP8N80C/FQPF8N80C

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

1

10

7.0 V

6.5 V

6.0 V
Botto m : 5.5 V

0

10

, Dra in C u rre n t [A ]

D

I

-1

10

-1

10

0

10

$

Note s :

1. 250's Pulse Test

%

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

VGS = 20V

VGS = 10V

$

Note : T

%

= 25

J

3.0

2.5

],

&

[

2.0

DS(ON)

R

1.5

Drain-Source On-Resistance

1.0
048121620

ID, Drain Current [A]

1

10

150oC

0

10

, Dra in C u rr en t [A]

D

I

-1

10

246810

25oC

-55oC

$

Note s :

1. V

2. 25 0's Pulse Test

= 50V

DS

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

%

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

%

25

$

Note s :

1. V

= 0V

GS

2. 250's Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 160V

VDS = 400V

VDS = 640V

$

Note : I

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

C

iss

C

oss

C

rss

0

10

gd

10

$

1. V

2. f = 1 MHz

1

Note s :

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Ga te -Sou r ce V o lta g e [V ]

GS

2

V

0

010203040

QG, Tota l G a te C h a rg e [n C ]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

= 8A

D

Rev. A, March 2003©2003 Fairchild Semiconductor Corporation