Fairchild FQPF8N60CF service manual

FQPF8N60CF

600V N-Channel MOSFET

FQPF8N60CF 600V N-Channel MOSFET

February 2006

TM

FRFET

Features

• 6.26A, 600V, R

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 12 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.5Ω @VGS = 10 V

DS(on)

GSD

TO-220F

FQPF Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FQPF8N60CFT Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

* Drain current limited by maximum junction temperature

Drain-Source Voltage 600 V

Drain Current - Continuous (TC = 25°C) 6.26* A

- Continuous (T

Drain Current - Pulsed
Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 48 W

- Derate above 25°C 0.38 W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 3.96* A

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

25* A

160 mJ

6.26 A

14.7 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FQPF8N60CF Units

R

θJC

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQPF8N60CF Rev. A

Thermal Resistance, Junction-to-Case 2.6 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQPF8N60CFT FQPF8N60CFT TO-220F -- -- 50

FQPF8N60CF 600V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 7.3mH, IAS = 6.26A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 6.26A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C

Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA

= 480 V, TC = 125°C -- -- 100 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

Static Drain-Source On-Resistance VGS = 10 V, ID = 3.13 A -- 1.25 1.5 Ω

Forward Transconductance VDS = 40 V, ID =3.13 A (Note 4) -- 8.7 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 105 135 pF

f = 1.0 MHz

-- 965 1255 pF

Reverse Transfer Capacitance -- 12 16 pF

Turn-O n Delay Time VDD = 300 V, ID = 6.26A,

R

= 25 Ω

Turn-O n Rise Time --

Turn-Off Delay Time --

Turn-Off Fall Time --

G

(Note 4, 5)

Total Gate Charge VDS = 480 V, ID = 6.26A,

V

= 10 V

Gate-Source Charge --

Gate-Drain Charge --

GS

(Note 4, 5)

--

--

16.5 45

60.5 130

81 170

64.5 140

28 36

4.5

12

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 6.26 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.26 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 6.26 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 242 -- nC

Starting TJ = 25°C

DSS,

F

-- 82 -- ns

ns

ns

ns

ns

nC

FQPF8N60CF Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQPF8N60CF 600V N-Channel MOSFET

-55oC

Note s :※

1. VDS = 40V

2. 250µ s Pulse Test

1

10

0

10

, Drain Current [A]

D

I

-1

10

10

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V
Bottom : 5.0 V

-1

0

10

VDS, Drain-Source Volt age [V]

Notes :※

1. 250µ s Pul se Test

2. T

= 25℃

C

1

10

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Source Vol tage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

3.5

3.0

2.5

[Ω ],

2.0

DS(ON)

R

1.5

Drain-Source On-Resistance

1.0

0.5
0 5 10 15 20

VGS = 10V

ID, Drai n Current [A]

VGS = 20V

Note : T※J = 25℃

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150℃

VSD, Source- Drain volt age [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2000

1800

1600

1400

1200

1000

800

600

Capacitance [pF]

400

200

0

-1

10

FQPF8N60CF Rev. A

C

iss

C

oss

C

rss

0

10

VDS, Drai n-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

Notes ;※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

10

8

VDS = 480V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Total Gate Charge [nC]

3 www.fairchildsemi.com

VDS = 120V

VDS = 300V

* Note : ID = 6.26A