Fairchild FQP7N65C, FQPF7N65C service manual
FQP7N65C/FQPF7N65C
650V N-Channel MOSFET
FQP7N65C/FQPF7N65C
®
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 7A, 650V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
DS(on)
= 1.4Ω @V
GS
= 10 V
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
D
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S
G
SD
TO-220
FQP Series
Absolute Maximum Ratings
D
G
S
TC = 25°C unless otherw ise noted
TO-220F
FQPF Series
!!!!
!!!!
G
Symbol Parameter FQP7N65C FQPF7N65C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 650 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
77 *A
4.2 4.2 * A
28 28 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
212 mJ
7A
1.6 mJ
4.5 V/ns
160 52 W
- Derate above 25°C 1.28 0.42 W/°C
T
, T
J
STG
T
L
* Drain current limited by maximum junction temperature.
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter FQP7N65C FQPF7N65C Units
R
θJC
R
θCS
R
θJA
©2004 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case 0.78 2.4 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Rev. A, May 2004
FQP7N65C/FQPF7N65C
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, I
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 650 V, VGS = 0 V
DS
= 520 V, TC = 125°C
V
DS
= 30 V, VDS = 0 V
V
GS
= -30 V, VDS = 0 V
V
GS
= 250 µA
D
650 -- -- V
-- 0.8 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
= VGS, I
V
DS
= 10 V, ID = 3.5 A
V
GS
= 40 V, ID = 3.5 A
V
DS
= 250 µA
D
(Note 4)
2.0 -- 4.0 V
-- 1.2 1.4 Ω
-- 8 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 100 130 pF
Reverse Transfer Capacitance -- 12 16 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 955 1245 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 50 110 ns
Turn-Off Delay Time -- 90 190 ns
Turn-Off Fall Time -- 55 120 ns
Total Gate Charge
Gate-Source Charge -- 4.5 -- nC
Gate-Drain Charge -- 12 -- nC
= 325 V, ID = 7A,
V
DD
= 25 Ω
R
G
(Note 4, 5)
V
= 520 V, ID = 7A,
DS
V
= 10 V
GS
(Note 4, 5)
-- 20 50 ns
-- 28 36 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, I
3. I
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 3.3 -- µC
= 7A, VDD = 50V, R
AS
≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BV
= 25 Ω, Starting T
G
Starting TJ = 25°C
DSS,
= 25°C
J
= 0 V, IS = 7A
V
GS
= 0 V, IS = 7A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.4 V
-- 400 -- ns
(Note 4)
Rev. A, May 2004
Typical Characteristics
FQP7N65C/FQPF7N65C
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
1
10
5.5 V
Bottom : 5.0 V
0
10
, Drain Cu rrent [A ]
D
I
-1
10
0
10
VDS, Drai n-Source Volt age [V]
3.0
2.5
[Ω ],
2.0
DS(ON)
R
1.5
Drain-Source On-Resistance
1.0
0 5 10 15
ID, Drain Current [A]
VGS = 10V
Notes :
※
1. 250µ s Pul se Test
2. T
= 25
℃
C
1
10
VGS = 20V
Note : T
※
1
10
150oC
0
10
25oC
, Drain Current [A]
D
I
-1
10
246810
-55oC
Notes :
※
1. VDS = 40V
2. 250µs Pul se Test
VGS, Gate-Source Vol tage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact er i st ics
1
10
= 25
℃
J
0
10
, Reverse Drain Current [A]
DR
I
-1
10
150
℃
25
℃
Notes :
※
1. VGS = 0V
2. 250µ s Pul se Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1. 6 1.8 2.0
VSD, Source-Drai n voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1600
1200
800
Capacitances [pF]
400
0
-1
10
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
C
C
C
C
iss
C
oss
C
rss
0
10
VDS, Drain- Source Voltage [V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
Note ;
※
1. VGS = 0 V
2. f = 1 MHz
1
10
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 130V
VDS = 325V
VDS = 520V
Note : I
※
= 7A
D
Rev. A, May 2004
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 4 8 12 16 20 24 28
QG, Total Gate Charge [nC]
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