Fairchild FQP6N80C, FQPF6N80C service manual
FQP6N80C/FQPF6N80C
800V N-Channel MOSFET
FQP6N80C/FQPF6N80C
TM
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 5.5A, 800V, R
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 2.5Ω @VGS = 10 V
DS(on)
suited for high efficiency switch mode power supplies.
D
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S
G
SD
TO-220
FQP Series
Absolute Maximum Ratings T
D
G
S
= 25°C unless otherwise noted
C
TO-220F
FQPF Series
!!!!
!!!!
G
Symbol Parameter FQP6N80C FQPF6N80C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 800 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
5.5 5.5 * A
3.2 3.2 * A
22 22 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
680 mJ
5.5 A
15.8 mJ
4.5 V/ns
158 51 W
- Derate above 25°C 1.27 0.41 W/°C
T
, T
J
STG
T
L
* Drain current limited by maximum junction temperature.
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter FQP6N80C FQPF6N80C Units
R
θJC
R
θCS
R
θJA
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
Thermal Resistance, Junction-to-Case 0.79 2.45 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
FQP6N80C/FQPF6N80C
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 800 V, VGS = 0 V
DS
V
= 640 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
800 -- -- V
-- 0.97 -- V/°C
-- -- 10 µA
-- -- 100 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 2.75 A
V
GS
= 50 V, ID = 2.75 A
V
DS
(Note 4)
3.0 -- 5.0 V
-- 2.1 2.5 Ω
-- 5.4 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 90 115 pF
Reverse Transfer Capacitance -- 8 11 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 1010 1310 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 65 140 ns
Turn-Off Delay Time -- 47 105 ns
Turn-Off Fall Time -- 44 90 ns
Total Gate Charge
Gate-Source Charge -- 6 -- nC
Gate-Drain Charge -- 9 -- nC
= 400 V, ID = 5.5 A,
V
DD
= 25 Ω
R
G
(Note 4, 5)
V
= 640 V, ID = 5.5 A,
DS
V
GS
(Note 4, 5)
= 10 V
-- 26 60 ns
-- 21 30 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 42mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 A
= 0 V, IS = 5.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 5.4 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 5.5 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.4 V
-- 615 -- ns
(Note 4)
Rev. A, June 2003
Typical Characteristics
FQP6N80C/FQPF6N80C
V
GS
Top : 15.0 V
1
10.0 V
10
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
0
10
-1
10
, Drain Current [A]
D
I
-2
10
-1
10
0
10
%
Notes :
1. 250&s Pulse Test
$
= 25
2. T
C
1
10
VDS, Drain-Source Voltage [V]
6
5
],
4
'
[
DS(ON)
3
R
2
Drain-Source On-Resistance
1
036912
VGS = 10V
VGS = 20V
%
Note : T
$
= 25
J
ID, Drain Cur rent [A]
1
10
150oC
0
10
, Drain Current [A]
D
I
-1
10
25oC
246810
-55oC
%
Notes :
= 50V
1. V
DS
2. 250&s Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
0
10
$
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
150
$
25
%
Notes :
1. V
= 0V
GS
2. 250&s Pulse Test
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 160V
VDS = 400V
VDS = 640V
%
Note : I
1500
1200
900
600
Capacitance [pF]
300
0
-1
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
C
iss
C
oss
C
rss
0
10
gd
10
%
Notes ;
1. V
2. f = 1 MHz
1
= 0 V
GS
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25
QG, Total Gate Cha rge [n C]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
= 6.0A
D
Rev. A, June 2003©2003 Fairchild Semiconductor Corporation
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