Fairchild FQPF6N70 service manual

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FQPF6N70

700V N-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQPF6N70

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switch mode power supply.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQPF6N70 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 700 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.39 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 3.5A, 700V, R

• Low gate charge ( typical 30 nC)

• Low Crss ( typical 15 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 1.5 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

3.5 A

2.2 A
14 A

600 mJ

3.5 A

4.8 mJ

4.5 V/ns
48 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 2.6 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A2, December 2000

FQPF6N70

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 700 V, VGS = 0 V

DS

V

= 560 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

700 -- -- V

-- 0.78 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1.75 A

V

GS

= 50 V, ID = 1.75 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.16 1.5 Ω

-- 4.7 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 125 150 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

Reverse Transfer Capacitance -- 15 120 pF

-- 1100 1400 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns

= 350 V, ID = 6.2 A,

V

DD

R

= 25 Ω

G

Turn-Off Delay Time -- 55 120 ns
Turn-Off Fall Time -- 50 110 ns

g
gs
gd

Total Gate Charge
Gate-Source Charge -- 6.5 -- nC
Gate-Drain Charge -- 13 -- nC

V

= 560 V, ID = 6.2 A,

DS

V

= 10 V

GS

(Note 4, 5)

(Note 4, 5)

-- 25 60 ns

-- 30 40 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 91mH, IAS = 3.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 6.2A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 14 A

= 0 V, IS = 3.5 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.7 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 6.2 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 340 -- ns

(Note 4)

Rev. A2, December 2000

Typical Characteristics

FQPF6N70

V

1

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

0

-1

-1

10

GS

※

Note s :

1. 250μs Pulse Test

℃

2. T

= 25

C

0

10

1

10

10

10

, Dra in Curre nt [A]

D

I

10

VDS, Drain-Source Voltage [V]

4

3

],

Ω

[

2

DS(ON)

R

1

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

※

℃

Note : T

= 25

0

048121620

J

ID, Drain Current [A]

1

10

℃

150

0

10

, Drain Current [A]

D

I

-1

10

246810

℃

25

-55

℃

※

Notes :

= 50V

1. V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

℃

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

2000

1600

1200

800

Capacitance [pF]

400

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

VDS = 140V

VDS = 350V

VDS = 560V

※

Note : I

= 6.2 A

D

Rev. A2, December 2000

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Total Gate Charge [nC]