Fairchild FQP6N60C, FQPF6N60C service manual
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FQP6N60C/FQPF6N60C
600V N-Channel MOSFET
FQP6N60C/FQPF6N60C
®
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 5.5A, 600V, R
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
DS(on)
= 2.0Ω @V
GS
= 10 V
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
D
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S
G
SD
TO-220
FQP Series
Absolute Maximum Ratings
D
G
S
TC = 25°C unless otherw ise noted
TO-220F
FQPF Series
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!!!!
G
Symbol Parameter FQP6N60C FQPF6N60C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 600 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
5.5 5.5 * A
3.3 3.3 * A
22 22 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
300 mJ
5.5 A
12.5 mJ
4.5 V/ns
125 40 W
- Derate above 25°C 1.0 0.31 W/°C
T
, T
J
STG
T
L
* Drain current limited by maximum junction temperature.
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter FQP6N60C FQPF6N60C Units
R
θJC
R
θCS
R
θJA
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
Thermal Resistance, Junction-to-Case 1.0 3.2 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
FQP6N60C/FQPF6N60C
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, I
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 600 V, VGS = 0 V
DS
= 480 V, TC = 125°C
V
DS
= 30 V, VDS = 0 V
V
GS
= -30 V, VDS = 0 V
V
GS
= 250 µA
D
600 -- -- V
-- 0.6 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
= VGS, I
V
DS
= 10 V, ID = 2.75 A
V
GS
= 40 V, ID = 2.75 A
V
DS
= 250 µA
D
(Note 4)
2.0 -- 4.0 V
-- 1.7 2.0 Ω
-- 4.8 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 65 85 pF
Reverse Transfer Capacitance -- 7 10 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 620 810 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 45 100 ns
Turn-Off Delay Time -- 45 100 ns
Turn-Off Fall Time -- 45 100 ns
Total Gate Charge
Gate-Source Charge -- 3.5 -- nC
Gate-Drain Charge -- 6.5 -- nC
= 300 V, ID = 5.5A,
V
DD
= 25 Ω
R
G
(Note 4, 5)
V
= 480 V, ID = 5.5A,
DS
V
= 10 V
GS
(Note 4, 5)
-- 15 40 ns
-- 16 20 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.2mH, I
3. I
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.1 -- µC
= 5.5 A, VDD = 50V, R
AS
≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BV
= 25 Ω, Starting T
G
Starting TJ = 25°C
DSS,
= 25°C
J
= 0 V, IS = 5.5 A
V
GS
= 0 V, IS = 5.5 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.4 V
-- 310 -- ns
(Note 4)
Rev. A, March 2004
FQP6N60C/FQPF6N60C
Typical CharacteristicsTypical Characteristics
V
GS
Top : 15.0 V
1
10
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
0
Bottom : 4.5 V
10
-1
, Drain Current [A]
10
D
I
-2
10
-1
10
VDS, Drai n-Source Vol tage [V]
Figure 1. On-Region Char acteristics
6
5
4
[Ω ],
3
DS(ON)
R
2
Drain-Source On-Resistance
1
0
02468101214
0
10
VGS = 10V
ID, Drain Current [ A]
Notes :
※
1. 250µ s Pulse Test
2. T
1
10
VGS = 20V
※
= 25
C
Note : T
1
10
0
10
, Drain Current [A]
D
I
℃
-1
10
246810
Figure 2. Transfer Characteristics
1
10
= 25
℃
J
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
(Continued)
150oC
25oC
VGS, Gate-Source Vol tage [V]
150
℃
25
℃
VSD, Sourc e-Drain vol tage [V]
-55oC
Notes :
※
1. VDS = 40V
2. 250µ s Pulse Test
Notes :
※
1. VGS = 0V
2. 250µ s Pulse Test
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
1000
800
600
400
C
iss
C
oss
Capacitances [pF]
200
0
-1
10
C
rss
0
10
gd
C
= C
rss
gd
Note ;
※
1. VGS = 0 V
2. f = 1 MHz
1
10
VDS, Drain- Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0481216
QG, Total Gate Charge [nC]
VDS = 120V
VDS = 300V
VDS = 480V
※
Note : I
= 5.5A
D
Figure 5. Capacitance Character is tics Figure 6. Gate Charge Characterist ics
Rev. A, March 2004©2004 Fairchild Semiconductor Corporation
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