Fairchild FQPF6N45 service manual

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FQPF6N45

450V N-Channel MOSFET

January 2001

QFET

QFET

QFETQFET

FQPF6N45

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply,
electronic lamp ballast based on half bridge.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter FQPF6N45 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 450 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.34 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 4.0A, 450V, R

• Low gate charge ( typical 16 nC)

• Low Crss ( typical 11 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 1.1Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

4.0 A

2.5 A

350 mJ

4.0 A

4.2 mJ

4.5 V/ns

300 °C

16 A

42 W

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 2.98 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A1, January 2001

FQPF6N45

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 450 V, VGS = 0 V

DS

V

= 360 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

450 -- -- V

-- 0.47 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V , ID = 2.0 A

V

GS

= 50 V, ID = 2.0 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.86 1.1 Ω

-- 3.0 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 95 125 pF
Reverse Transfer Capacitance -- 11 15 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 620 810 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns
Turn-Off Delay Time -- 30 70 ns
Turn-Off Fall Time -- 40 90 ns
Total Gate Charge
Gate-Source Charge -- 4.3 -- nC
Gate-Drain Charge -- 7.8 -- nC

= 225 V, ID = 6.2 A,

V

DD

= 25 Ω

R

G

V

= 360 V, ID = 6.2 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 15 40 ns

-- 16 21 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 39mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 6.2A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 4.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A

= 0 V, IS = 4.0 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.4 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 6.2 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 210 -- ns

(Note 4)

Rev. A1, January 2001

Typical Characteristics

FQPF6N45

V
Top : 15 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V
Botto m : 5.5 V

-1

GS

※

Notes :

1. 250μs Pulse Test

℃

= 25

2. T

C

0

10

1

10

1

10

0

10

, Dra in C u rre n t [A ]

D

I

-1

10

10

VDS , Drain-Source Voltage [V]

4.0

3.5

3.0

],

2.5

Ω

[

2.0

DS(on)

R

1.5

1.0

Drain-Source On-Resistance

0.5

0.0
024681012141618

VGS = 20V

VGS = 10V

※

Note : T

ID , Drain Curren t [A]

1

10

℃

150

0

10

, Drain Current [A]

D

I

-1

10

246810

℃

25

-55

℃

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

℃

= 25

J

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

℃

150

℃

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 90V

VDS = 225V

VDS = 360V

※

Note : I

= 6.2A

D

1200

1000

800

600

400

Capacitance [pF]

200

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

※

Note s :

1. V

= 0 V

GS

10

2. f = 1 MHz

1

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 4 8 12 16 20

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International Rev. A1, January 2001