Fairchild FQPF5N90 service manual

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FQPF5N90

FQPF5N90

900V N-Channel MOSFET

September 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQPF5N90 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 900 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.41 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 3.0A, 900V, R

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 13 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 2.3 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

3.0 A

1.9 A
12 A

660 mJ

3.0 A

5.1 mJ

4.0 V/ns
51 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 2.45 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, September 2000

FQPF5N90

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 1.0 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1.5 A

V

GS

= 50 V, ID = 1.5 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.8 2.3 Ω

-- 4.0 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 110 145 pF
Reverse Transfer Capacitance -- 13 17 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1200 155 0 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 65 140 ns
Turn-Off Delay Time -- 65 14 0 ns
Turn-Off Fall Time -- 50 110 ns
Total Gate Charge
Gate-Source Charge -- 7.2 -- nC
Gate-Drain Charge -- 15 -- nC

= 450 V, ID = 5.4 A,

V

DD

= 25 Ω

R

G

V

= 720 V, ID = 5.4 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 28 65 ns

-- 31 40 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 139mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5.4A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A

= 0 V, IS = 3.0 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 5.26 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 5.4 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 610 -- ns

(Note 4)

Rev. A, September 2000

Typical Characteristics

FQPF5N90

1

10

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

0

10

Bottom : 5.5 V

-1

10

, Drain Current [A]

D

I

-2

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

5

4

],

Ω

[

3

DS(ON)

R

2

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

※

= 25

Note : T

1

0369121518

J

ID, Drain Current [A]

1

10

150oC

0

10

, Drain Current [A]

D

I

-1

10

246810

25oC

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

VGS, Gate-Source V oltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

℃

0

10

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

VSD, Sou r c e-Drain voltage [V]

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

2200
2000
1800
1600
1400
1200
1000

800

Capacitance [pF]

600
400
200

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

C

iss

C

oss

C

rss

0

10

gd

1

10

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V]

VDS = 180V

VDS = 450V

VDS = 720V

QG, Tota l Gate Charge [n C]

※

Note : I

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 5.4 A

D

Rev. A, September 2000©2000 Fairchild Semiconductor International