Fairchild FQPF5N80 service manual

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FQPF5N80

800V N-Channel MOSFET

September 2000

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Features

• 2.8A, 800V, R

• Low gate charge ( typical 25 nC)

• Low Crss ( typical 11 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 2.6Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supply.

D

!

"

5

3

"

" "

"

!

S

GSD

Absolute Maximum Ratings

TO-220F

FQPF Series

TC = 25°C unless otherwise noted

!

G

Symbol Parameter FQPF5N80 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 800 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

2.8 A

1.77 A

11.2 A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

590 mJ

2.8 A

4.7 mJ

4.0 V/ns 47 W

- Derate above 25°C 0.38 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case -- 2.66 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, September 2000

FQPF5N80

Electrical Characteristics

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 800 V, VGS = 0 V

DS

V

= 640 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

800 -- -- V

-- 0.9 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1.4 A

V

GS

= 50 V, ID = 1.4 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 2.0 2.6 Ω

-- 3.7 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 95 125 pF Reverse Transfer Capacitance -- 11 15 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 950 1250 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 60 130 ns Turn-Off Delay Time -- 55 12 0 n s Turn-Off Fall Time -- 40 90 ns Total Gate Charge Gate-Source Charge -- 5.6 -- nC Gate-Drain Charge -- 12 -- nC

= 400 V, ID = 4.8 A,

V

DD

= 25 Ω

R

G

V

= 640 V, ID = 4.8 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 22 5 5 ns

-- 25 3 3 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 140mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4.8A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 1 1.2 A

= 0 V, IS = 2.8 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 4.7 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 4.8 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 610 -- ns

(Note 4)

Rev. A, September 2000

Typical Characteristics

FQPF5N80

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

0

10

1

10

, Drain Current [A]

D

I

10

1

10

0

10

-1

-2

10

V Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

-1

GS

VDS, Drain-Source Voltage [V]

5

4

],

Ω

[

3

DS(ON)

R

2

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

℃

※

= 25

Note : T

1

03691215

J

ID, Drain Current [A]

1

10

150oC

0

10

, Drain Current [A]

D

I

-1

10

25oC

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

246810

VGS, Gate-Source V oltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

VSD, Sou r c e-Drain voltage [V]

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

1600

1400

1200

1000

800

600

Capacitance [pF]

400

200

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

C

iss

C

oss

C

rss

0

10

gd

1

10

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 4 8 1216202428

VDS, Drain-Source Voltage [V]

VDS = 160V

VDS = 400V

VDS = 640V

QG, Tota l Gate Ch arge [nC]

※

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

= 4.8A

D

Typical Characteristics (Continued)

FQPF5N80

1.2

1.1

1.0

, (Norma liz e d )

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

Notes :

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variat i on

vs Temperature

Operation in This Area is Limited by R

※

1. T

2. T

3. Single Pulse

1

Notes :

C

J

= 25 oC = 150 oC

DS(on)

100μs

1 ms

10 ms

100 ms

DC

2

10

1

10

0

10

, Drain Current [A]

-1

D

I

10

-2

10

0

10

VDS, Drai n -Source Voltage [V]

GS

= 250

D

= 0 V

3.0

2.5

2.0

μ

A

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

Notes :

1. V

= 10 V

GS

2. I

= 2.4 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature

3.0

2.5

2.0

1.5

1.0

, Drain Current [A]

D

I

0.5

3

10

0.0 25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

D=0.5

0

10

0.2

0.1

0.05

-1

10

0.02

0.01

(t), Thermal Response

JC

θ

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

※

N o te s :

1. Z

(t) = 2.66 ℃/W Ma x .

θ

JC

2. D u ty F a c to r , D = t

3. TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

1/t2

(t)

θ

JC

0

1

10

t1, S q u a re W a v e P u lse D ura tio n [s e c]

Figure 11. Transient Thermal Res pons e Cur ve

Rev. A, September 2000

FQPF5N80

12V

10V

200nF

3mA

Gate Charge Test Circuit & Waveform

V

GS

DS

GS

10V

Q

g

Q

gs

Q

gd

Charge

50KΩ

V

GS

300nF

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

10V

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

ID (t)

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse period

G

FQPF5N80

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Rev. A, September 2000

Package Dimensions

FQPF5N80

10.16 ±0.20

TO-220F

ø3.18 ±0.10

2.54

±0.20

3.30 ±0.10

15.80 ±0.20

9.75 ±0.30

MAX1.47

0.80 ±0.10

(7.00)

(30°)

6.68 ±0.20

(1.00x45°)

(0.70)

15.87 ±0.20

0.35 ±0.10

2.54TYP

[2.54

±0.20]

#1

9.40 ±0.20

2.54TYP

[2.54

±0.20]

4.70 ±0.20

0.50

+0.10 –0.05

2.76 ±0.20

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

®

FAST

FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. F1

Fairchild FQPF5N80 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual