Fairchild FQPF3N90 service manual

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FQPF3N90

FQPF3N90

900V N-Channel MOSFET

September 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter FQPF3N90

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 900 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.34 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 2.1A, 900V, R

• Low gate charge ( typical 20 nC)

• Low Crss ( typical 8.0 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 4.25 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

!

!

"

!

!

"
"

"

!

!

S

"

"

Units

2.1 A

1.33 A

8.4 A

450 mJ

2.1 A

4.3 mJ

4.0 V/ns
43 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 2.9 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, September 2000

FQPF3N90

Electrical Characteristics

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 1.0 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

V

= 10 V , ID = 1.05 A

GS

= 50 V, ID = 1.05 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 3.3 4.25 Ω

-- 3.1 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 65 85 pF
Reverse Transfer Capacitance -- 8.0 10 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 700 910 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 45 100 ns
Turn-Off Delay Time -- 40 90 ns
Turn-Off Fall Time -- 35 80 ns
Total Gate Charge
Gate-Source Charge -- 4.3 -- nC
Gate-Drain Charge -- 9.1 -- nC

= 450 V, ID = 3.6 A,

V

DD

R

= 25 Ω

G

V

= 720 V, ID = 3.6 A,

DS

= 10 V

V

GS

(Note 4, 5)

(Note 4, 5)

-- 18 45 ns

-- 20 26 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 193mH, IAS = 2.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 3.6A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er at ur e

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.1 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 8.4 A

= 0 V, IS = 2.1 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 3.2 -- µC

Starting TJ = 25°C

DSS,

V

GS

V

= 0 V, IS = 3.6 A,

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 510 -- ns

(Note 4)

Rev. A, September 2000

Typical Characteristics

V

FQPF3N90

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

0

10

6.0 V
Bottom : 5 .5 V

-1

10

, Drain Current [A]

D

I

-2

10

-1

10

8

7

6

],

Ω

[

5

DS(ON)

R

4

Drain-Source On-Resistance

3

2

0246810

GS

0

10

VDS, Drain-Source Voltage [V]

VGS = 10V

VGS = 20V

ID, Drain Current [A]

150oC

0

10

25oC

, Drain Current [A]

D

I

-1

10

246810

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

※

Note : T

℃

= 25

J

VSD, Source-Drain voltage [V]

℃

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variation vs.

Drain Current and Gate V oltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

1200

1000

800

600

400

Capacitance [pF]

200

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

10

1

※

Notes :

1. V

GS

2. f = 1 MHz

= 0 V

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 3 6 9 12 15 18 21

VDS, Drain-Source Voltage [V]

VDS = 180V

VDS = 450V

VDS = 720V

QG, Tota l Gate Char g e [ n C]

※

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 3.6 A

D

Rev. A, September 2000©2000 Fairchild Semiconductor International