Fairchild FQPF3N20 service manual

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QFET P-CHANNEL FQPF3P20

FEATURES

BV

= −200V

DSS

• Advanced New Design

• Avalanche Rugged Technology

• Rugged Gate Oxide Technology

• Very L ow Int rinsic Capacitances

R

DS(ON)

= −2.2A

I

D

= 2.7Ω

• Excellent Switching Characteristics

TO-220F

• Unrivalled Gate Charge: 6.0nC (Typ.)

• Extended Safe Operating Area

•Lower R

DS(ON)

: 2.06Ω (Typ.)

1

2

3

1. Gate 2. Drai n 3. So urc e

ABSOLUTE MAXIMUM RATINGS

Symbol Characteristics Value Units

V

DSS

I

D

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt −5.5 V/ns

Drain-to-Source Voltage −200 V
Continuous Drain Current (TC = 25°C) −2.2
Continuous Drain Current (T
Drain Current-Pulsed −8.8 A

= 100°C) −1.39

C

①

Gate-to-Source Voltage ±30 V
Single Pulsed Avalanche Energy 150 mJ
Avalanche Current −2.2 A
Repetitive Avalanche Energy 3.2 mJ

②
①
①
③

A

P

D

T

, T

J

STG

T

L

Total Power Dissipation (TC = 25°C)
Linear Derating Factor

Operating Junction and Storage
Temperature Range

Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds

THERMAL RESISTANCE

S

mbol Characteristics Typ. Max. Units

R

JC

θ

R

JA

θ

32

0.26

−55 to +150

300

Junction-to-Case − 3.9

Junction-to-Ambient − 62.5

W

W/°C

°C

°C/W

REV. B

1



1999 Fairchild Semiconductor Corporation

FQPF3P20 QFET P-CHANNEL

g

g

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise specified)

Symbol Characteristics Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage −200 −−VVGS=0V, ID=−250µA
Breakdown Voltage Temp. Coeff. −−0.18 − V/°CID=−250µA,

J

Gate Threshold Voltage −3.0 −−5.0 V VDS=−5V, ID=−250µA
Gate-Source Leakage, Forward −−−100

VGS=−30V

nA

Gate-Source Leakage, Reverse −−100 V

−−−1

Drain-to-Source Leakage Current

µA

−−−10 V

Static Drain-Source
On-State Resistance

− 2.06 2.7 Ω V

= 30V

GS

V

=−200V

DS

=−160V , TC=125°C

DS

=−10V, ID=−1.1A ④

GS

Forward Transconductance − 1.15 − SVDS=−40V , ID=−1.1A ④
Input Capacitance − 190 250
Output Capacitance − 45 60
Reverse Transfer Capacitance − 7.5 10

pF

=0V, VDS=−25V

V

GS

f=1MHz

See Fi g 5

Turn-On Del ay Ti m e − 8.5 25

=−100V, ID=−2.8A

V

Rise T ime − 35 80

ns

Turn-Off Del ay Ti me − 12 35

DD

R

=50Ω

G

See Fi g 13

④ ⑤

Fall Time − 25 60
Total Gate Charge − 6.0 8.0
Gate-Source Charge − 1.7 −
Gate-Drain (Miller) Charge − 2.9 −

nC

=−160V , VGS=−10V

V

DS

I

=−2.8A

D

See Fig 6 & Fig 12

See Fi g 7

④ ⑤

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Charac teristics Min. Typ. Max. Units Test Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

Repetitive Ratin

①

L=46.5mH, I

②

I

③

SD

Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

④

Essentially Independent of Operatin

⑤

2

Continuous Source Current −−−2.2
Pulsed-Source Current ① −−−8.8

Integral reverse pn-diode

A

in the MOSFET

Diode Forward Voltage ④ −−−5.0 V TJ=25°C, IS=−2.2A, VGS=0V
Reverse Recovery Time − 100 − ns
Reverse Recovery Charge − 0.34 −µC

: Pulse Width Limited by Maximum Junction Temperature

=−2.2A, VDD=−50V, RG=25Ω, Starting TJ =25°C

AS

−

≤

2.8A, di/dt ≤ 300A/µs, V

DD

≤

BV

, Starting TJ =25°C

DSS

Temperature

=25°C, IF=−2.8A, VDD=−160V

T

J

di

/dt=100A/µs ④

F

QFET P-CHANNEL FQPF3P20

]

Ω

, [

DS(on)

R

10

, Drain Curre n t [A]

D

10

-I

10

V
Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V

0

Bottom : -5.5 V

-1

-1

10

8

6

4

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

GS

-VDS, Drain-Source Voltage [V]

0

¡Ø Note :

1. 250¥ìs Pulse Te st
= 25¡É

2. T

C

0

10

1

10

10

, Drain C urrent [A]

D

-I

-1

10

246810

25¡É

150¡É

-55¡É

¡Ø Note

1. V

2. 250¥ìs Pulse Te st

-VGS , Gate-Sourc e Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

VGS = - 10V

0

VGS = - 20V

10

150¡É

25¡É

= -40V

DS

Drain-Source On-Resistance

2

¡Ø Note : TJ = 25¡É

0

02468

-ID , Drain C u rrent [A]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

400

300

200

Capacitances [pF]

100

0

-1

10

C

iss

C

oss

C

rss

0

10

gd

C

= C

rss

gd

¡Ø Note ;

1. V

= 0 V

GS

2. f = 1 MHz

1

10

-VDS, Drain-Source V oltage [V]

, Reverse Drain Current [A]

DR

-I

-1

10

0.4 0.8 1.2 1.6 2.0 2.4 2.8

¡Ø Note :

= 0V

1. V

GS

2. 250¥ìs Pulse Test

-VSD , Sou rce-Drain Vo ltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

12

10

8

6

4

, Gate-Sourc e Voltage [V ]

GS

2

-V

0

01234567

VDS = -40V

VDS = -100V

VDS = -160V

¡Ø Note : ID = -2.8 A

QG, Total Gate Charge [nC]

3