Fairchild FQPF33N10 service manual

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FQPF33N10

FQPF33N10

100V N-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

GSD

Absolute Maximum Ratings

Symbol Parameter FQPF33N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.27 W/°C

TO-220F

FQPF Series



TC = 25°C unless otherwise noted

= 25°C)

C

= 100°C)

C

Features

• 18A, 100V, R

• Low gate charge ( typical 38 nC)

• Low Crss ( typical 62 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.052Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

18 A

12.7 A
72 A

±

25 V

430 mJ

18 A

4.1 mJ

6.0 V/ns
41 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 3.70 °CW
Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

Rev. A, April 2000

FQPF33N10

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 150°C

DS

= 25 V, VDS = 0 V

V

GS

V

= -25 V, VDS = 0 V

GS

100 -- -- V

-- 0.11 -- V/°C

-- -- 1

-- -- 10

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V , ID = 9 A

V

GS

= 40 V, ID = 9 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.040 0.052

-- 20 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 320 420 pF
Reverse Transfer Capacitance -- 62 80 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1150 1500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 195 400 ns
Turn-Off Delay Time -- 80 170 ns
Turn-Off Fall Time -- 110 230 ns
Total Gate Charge
Gate-Source Charge -- 7.5 -- nC
Gate-Drain Charge -- 18 -- nC

= 50 V, ID = 33 A,

V

DD

Ω

= 25

R

G

V

= 80 V, ID = 33 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 15 40 ns

-- 38 51 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2mH, I

3. ISD  33A, di/dt  300A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A

= 0 V, IS = 18 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.22 --

= 18A, VDD = 25V, RG = 25

AS

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 33 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.5 V

-- 80 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

V

2

Top : 15 .0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Botto m : 4 .5 V

1

0

-1

10

GS



Note s :

1. 250s Pulse Test



2. T

= 25

C

0

10

1

10

10

FQPF33N10

10

, Drain Current [A]

D

I

10

VDS, Drain-Source Voltage [V]

2

10

1

10



175

, Drain Current [A]

D

I



25

0

10

246810

VGS, Gate-Source Voltage [V]



Note s :

1. V

= 40V



-55

DS

2. 250s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0.20

0.15

VGS = 10V

],

0.10



[

DS(ON)

R

0.05

Drain-Source O n -Resistance

0.00
0 20406080100120

VGS = 20V



ID, Drain Current [A]

Note : T

2

10

1

10

, Reverse Drain Current [A]

DR



= 25

J

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4



175

VSD, Source-Drain voltage [V]





25

Note s :

= 0V

1. V

GS

2. 250s Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd



Notes :

= 0 V

1. V

GS

2. f = 1 M H z

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 5 10 15 20 25 30 35 40

QG, Total Gate Charge [nC]

VDS = 50V

VDS = 80V



Note : I

D

= 33A

Rev. A, April 2000