Fairchild FQPF30N06L service manual

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FQPF30N06L

60V LOGIC N-Channel MOSFET

FQPF30N06L

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/

Features

• 22.5A, 60V, R

• Low gate charge ( typical 15 nC)

• Low Crss ( typical 50 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.035Ω @VGS = 10 V

DS(on)

DC converters, and high efficiency switching for power
management in portable and battery operated products.

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

D

G

S

Absolute Maximum Ratings T

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQPF30N06L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 60 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

22.5 A

15.9 A
90 A

Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

350 mJ

22.5 A

3.8 mJ

7.0 V/ns
38 W

- Derate above 25°C 0.25 W/°C

T

, T

J

STG

T

L

Operating and Storage Junction Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001

Thermal Resistance, Junction-to-Case -- 3.9 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQPF30N06L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Par a meter Test Co nditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 60 V, VGS = 0 V

DS

V

= 48 V, TC = 150°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

60 -- -- V

-- 0.06 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 11.3 A

GS

= 5 V , ID =11. 3 A

V

GS

V

= 25 V, ID = 11.3 A

DS

(Note 4)

1.0 -- 2.5 V

----0.027

0.035

0.035

0.045

-- 22 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 270 350 pF
Reverse Transfer Capacitance -- 50 65 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 800 1040 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 210 430 ns
Turn-Off Delay Time -- 60 130 ns
Turn-Off Fall Time -- 110 23 0 ns
Total Gate Charge
Gate-Source Charge -- 3.5 -- nC
Gate-Drain Charge -- 8.5 -- nC

= 30 V, ID = 16 A,

V

DD

= 25 Ω

R

G

= 48 V, ID = 32 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 15 40 ns

-- 15 20 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 810µH, IAS = 22.5A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 32A, di/dt ≤ 300A/us, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 22.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 90 A

= 0 V, IS = 22.5 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 90 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 32 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 60 -- ns

(Note 4)

Rev. A1. May 2001©2001 Fairchild Semiconductor Corporation

Typical Characteristics

FQPF30N06L

2

V
Top : 10.0 V
8 . 0 V
6 . 0 V
5 . 0 V
4 . 5 V
4 . 0 V
3 . 5 V
Botto m : 3.0 V

1

0

-1

10

GS

!

Notes :

1. 250"s Pulse Test

#

2. T

= 25

C

0

10

10

10

10

, Drain Curre nt [A]

D

I

10

VDS, Drain-Source Voltage [V]

VGS = 10V

!

Not e : T

= 25

J

80

60

],

$

[m

R

40

DS(ON)

20

VGS = 5V

Drain-Source On-Resistance

0

0 20406080100120

ID, Drain Current [A]

2

10

1

1

10

#

175

, Drain Current [A]

D

I

#

25

#

0

10

0246810

-55

V

, Gate-Source Voltage [V]

GS

!

Notes :

= 25V

1. V

DS

2. 250"s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2

10

1

10

, Reverse Drain Current [A]

#

175

DR

#

I

0

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6

#

25

!

Notes :

= 0V

1. V

GS

2. 250"s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resista nce Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 30V

VDS = 48V

!

Note : I

= 32A

D

2000

C

1500

1000

Capacitance [pF]

500

0

-1

10

oss

C

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

!

Notes :

1. V

= 0 V

GS

2. f = 1 MH z

0

10

1

10

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 5 10 15 20 25 30

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001