Fairchild FQPF2NA90 service manual

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

FQPF2NA90

FQPF2NA90

900V N-Channel MOSFET

September 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter FQPF2NA90

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 900 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.31 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 1.7A, 900V, R

• Low gate charge ( typical 15 nC)

• Low Crss ( typical 6.5 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 5.8 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

1.07 A

310 mJ

300 °C

Units

1.7 A

6.8 A

1.7 A

3.9 mJ

4.0 V/ns
39 W

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 3.2 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, September 2000

FQPF2NA90

Electrical Characteristics

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 1.0 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

V

= 10 V , ID = 0.85 A

GS

= 50 V, ID = 0.85 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 4.5 5.8 Ω

-- 2.3 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 52 68 pF
Reverse Transfer Capacitance -- 6.5 8.5 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 525 680 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 40 90 ns
Turn-Off Delay Time -- 30 70 ns
Turn-Off Fall Time -- 30 70 ns
Total Gate Charge
Gate-Source Charge -- 3.7 -- nC
Gate-Drain Charge -- 7.5 -- nC

= 450 V, ID = 2.8 A,

V

DD

R

= 25 Ω

G

V

= 720 V, ID = 2.8 A,

DS

= 10 V

V

GS

(Note 4, 5)

(Note 4, 5)

-- 17 45 ns

-- 15 20 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 203mH, IAS = 1.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.8A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er at ur e

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 1.7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.8 A

= 0 V, IS = 1.7 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.6 -- µC

Starting TJ = 25°C

DSS,

V

GS

V

= 0 V, IS = 2.8 A,

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 500 -- ns

(Note 4)

Rev. A, September 2000

Typical Characteristics

V
Top : 1 5 .0 V

FQPF2NA90

10.0 V

8.0 V

7.0 V

6.5 V

0

10

6.0 V
Bottom : 5 .5 V

-1

10

, Drain Current [A]

D

I

-2

10

-1

10

10

9

8

7

],

Ω

[

6

DS(ON)

R

5

4

Drain-Source On-Resistance

3

2

0123456

GS

0

10

VDS, Drain-Source Voltage [V]

VGS = 20V

ID, Drain Current [A]

VGS = 10V

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

※

Note : T

= 25

J

0

10

, Drain Current [A]

D

I

-1

10

246810

150oC

25oC

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

0

℃

10

℃

℃

, Reverse Drain Curre n t [A]

150

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate V oltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

VDS = 180V
VDS = 450V

VDS = 720V

※

Note : I

900

800

700

600

500

400

300

Capacitance [pF]

200

100

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

C

iss

C

oss

gd

※

Notes :

1. V

= 0 V

10

2. f = 1 MHz

1

GS

C

rss

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 4 8 12 16

QG, Tota l Gate Char g e [ n C]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 2.8 A

D

Rev. A, September 2000©2000 Fairchild Semiconductor International