Fairchild FQPF2N80 service manual

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FQPF2N80

FQPF2N80

800V N-Channel MOSFET

September 2000

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 1.5A, 800V, R

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 5.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 6.3Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supply.

D

!

!

"

"

5

5

3

3

"

"
"

"

!

!

S

GSD

Absolute Maximum Ratings

TO-220F

FQPF Series

TC = 25°C unless otherwise noted

!

!

G

Symbol Parameter FQPF2N80 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 800 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

1.5 A

0.95 A

6.0 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

180 mJ

1.5 A

3.5 mJ

4.0 V/ns

35 W

- Derate above 25°C 0.28 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 3.57 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, September 2000

FQPF2N80

Electrical Characteristics

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 800 V, VGS = 0 V

DS

V

= 640 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

800 -- -- V

-- 0.9 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V , ID = 0.75 A

V

GS

= 50 V, ID = 0.75 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 4.9 6.3 Ω

-- 2.2 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 45 60 pF
Reverse Transfer Capacitance -- 5.5 7.0 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 425 550 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 30 70 ns
Turn-Off Delay Time -- 25 60 ns
Turn-Off Fall Time -- 28 65 ns
Total Gate Charge
Gate-Source Charge -- 2.6 -- nC
Gate-Drain Charge -- 6.0 -- nC

= 400 V, ID = 2.4 A,

V

DD

= 25 Ω

R

G

V

= 640 V, ID = 2.4 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 12 3 5 ns

-- 12 1 5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 150mH, IAS = 1.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 1.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.0 A

= 0 V, IS = 1.5 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.0 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 2.4 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 480 -- ns

(Note 4)

Rev. A, September 2000

Typical Characteristics

FQPF2N80

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

0

10

6.5 V

6.0 V
Bottom : 5.5 V

-1

10

, Drain Current [A]

D

I

-2

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

VGS = 20V

VGS = 10V

※

Note : T

= 25

J

12

10

],

8

Ω

[

DS(ON)

6

R

4

Drain-Source On-Resistance

2

0123456

ID, Drain Current [A]

0

10

, Drain Current [A]

D

I

-1

10

246810

25oC

150oC

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

VGS, Gate-Source V oltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

℃

150

, Reverse Drain Current [A]

DR

℃

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD, Sou r c e-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 160V

VDS = 400V

VDS = 640V

※

Note : I

700

600

500

400

300

200

Capacitance [pF]

100

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

C

iss

C

oss

C

rss

0

10

gd

10

※

1. V

2. f = 1 MHz

1

Notes :

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 2 4 6 8 10 12 14

QG, Tota l Gate Ch arge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

= 2.4A

D

Rev. A, September 2000©2000 Fairchild Semiconductor International