Fairchild FQPF2N70 service manual

FQPF2N70

700V N-Channel MOSFET

FQPF2N70

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 2.0A, 700V, R

• Low gate charge ( typical 9.0 nC)

• Low Crss ( typical 5.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 6.3Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supply.

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

GSD

TO-220F

FQPF Series

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQPF2N70 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 700 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

2.0 A

1.3 A

8.0 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

140 mJ

2.0 A

2.8 mJ

4.5 V/ns

28 W

- Derate above 25°C 0.22 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2003 Fairchild Semiconductor Corporation Rev. A, March 2003

Thermal Resistance, Junction-to-Case -- 4.46 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQPF2N70

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 700 V, VGS = 0 V

DS

V

= 560 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

700 -- -- V

-- 0.4 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1.0 A

V

GS

= 50 V, ID = 1.0 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 5.0 6.3 Ω

-- 2.45 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 38 50 pF
Reverse Transfer Capacitance -- 5 7 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 270 350 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- -- 80 ns
Turn-Off Delay Time -- -- 50 ns
Turn-Off Fall Time -- -- 70 ns
Total Gate Charge
Gate-Source Charge -- 1.7 -- nC
Gate-Drain Charge -- 4.4 -- nC

= 350 V, ID = 2.0 A,

V

DD

= 25 Ω

R

G

(Note 4, 5)

V

= 560 V, ID = 2.0 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- -- 30 ns

-- 8.1 11 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 45mH, IAS = 2.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.0A, di/dt ≤ 200A/µs, VDD≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2003 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 8.0 A

= 0 V, IS = 2.0 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.09 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 2.0 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 260 -- ns

(Note 4)

Rev. A, March 2003

Typical Characteristics

FQPF2N70

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

!

Note :

1. 250$s Pulse Test

"

= 25

2. T

C

1

10

VDS, Drain-Source Voltage [V]

VGS = 20V

VGS = 10V

!

Note : T

"

= 25

J

15

12

],

9

#

[

DS(ON)

R

6

3

Drain-Source On-Resistance

0

012345

ID, Dra in C u rre n t [A ]

"

0

10

, Dra in C u rre n t [A ]

D

I

-1

10

246810

150

"

25

"

-55

!

Note

1. V

= 50V

DS

2. 250$s Pulse Test

VGS , Ga te -S o ur ce V o ltag e [V ]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

0

10

"

150

"

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

25

!

Note :

= 0V

1. V

GS

2. 250$s Pulse Tes t

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

500

400

300

200

Capacitances [pF]

100

0

-1

10

Figure 5. Capacitan ce Characteristics Figure 6. Gate Charge Char act er i st ic s

©2003 Fairchild Semiconductor Corporation

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

!

Note ;

1. V

= 0 V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0246810

VDS = 140V
VDS = 350V
VDS = 560V

QG, Total Gate Charge [nC]

!

Note : I

= 2 A

D

Rev. A, March 2003