Fairchild FQP2N60C, FQPF2N60C service manual

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

FQP2N60C/FQPF2N60C

600V N-Channel MOSFET

FQP2N60C/FQPF2N60C

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 2.0A, 600V, R

• Low gate charge ( typical 8.5 nC)

• Low Crss ( typical 4.3 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 4.7Ω @VGS = 10 V

DS(on)

suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D

!!!!

!!!!

!!!!

!!!!

####

####

""""

""""

!!!!

!!!!
!!!!

!!!!

!!!!

!!!!

S

G

SD

TO-220

FQP Series

Absolute Maximum Ratings T

D

G

S

= 25°C unless otherwise noted

C

TO-220F

FQPF Series

!!!!

!!!!

G

Symbol Parameter FQP2N60C FQPF2N60C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 600 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

2.0 2.0 * A

1.35 1.35 * A
88 *A

Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

120 mJ

2.0 A

5.4 mJ

4.5 V/ns

54 23 W

- Derate above 25°C 0.43 0.18 W/°C

T

, T

J

STG

T

L

* Drain current limited by maximum junction temperature.

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FQP2N60C FQPF2N60C Units

R

θJC

R

θCS

R

θJA

©2003 Fairchild Semiconductor Corporation Rev. A, September 2003

Thermal Resistance, Junction-to-Case 2.32 5.5 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

FQP2N60C/FQPF2N60C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 600 V, VGS = 0 V

DS

V

= 480 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

600 -- -- V

-- 0.6 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1 A

V

GS

= 40 V , ID = 1 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 3.6 4.7 Ω

-- 5.0 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 20 25 pF
Reverse Transfer Capacitance -- 4.3 3 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 180 235 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 25 60 ns
Turn-Off Delay Time -- 24 58 ns
Turn-Off Fall Time -- 28 66 ns
Total Gate Charge
Gate-Source Charge -- 1.3 -- nC
Gate-Drain Charge -- 4.1 -- nC

= 300 V, ID = 2 A,

V

DD

= 25 Ω

R

G

(Note 4, 5)

V

= 480 V, ID = 2 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 9 28 ns

-- 8.5 12 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 A

= 0 V, IS = 2 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.0 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 2 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.4 V

-- 230 -- ns

Rev. A, September 2003©2003 Fairchild Semiconductor Corporation

Typical Characteristics

FQP2N60C/FQPF2N60C

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

0

5.5 V

10

5.0 V
Bottom : 4 .5 V

-1

10

, Drain C u rre n t [A ]

D

I

$

Notes :

1. 250%s Pulse Test

&

2. T

= 25

-2

10

-1

10

0

10

C

1

10

VDS, Drain-Source Voltage [V]

12

10

8

],

'

[

6

DS(ON)

R

4

Drain-Source On-Resistance

2

0

012345

VGS = 10V

$

Note : T

VGS = 20V

= 25

J

&

ID, Drain Current [A]

1

10

150oC

0

10

-55oC

25oC

, Drain Current [A]

D

I

$

Notes :

= 40V

1. V

DS

-1

10

246810

, Gate-Source Voltage [V]

V

GS

2. 250%s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

&

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

$

Notes :

= 0V

1. V

&

25

GS

2. 250%s Pulse Te st

VSD, Sou rc e -D ra in v o ltag e [V ]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

500
450

400

350

300

250

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

12

10

VDS = 300V

8

VDS = 480V

6

200

$

150

Capacitances [pF]

100

C

rss

Note ;

= 0 V

1. V

GS

2. f = 1 MHz

50

0

-1

10

0

10

1

10

VDS, Drain-Source Voltage [V]

4

, Ga te- S ou rc e V o ltag e [V ]

GS

2

V

0

0246810

QG, Total G a te C h arg e [nC ]

VDS = 120V

$

Note : I

= 2A

D

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

Rev. A, September 2003©2003 Fairchild Semiconductor Corporation