Fairchild FQPF1P50 service manual

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FQPF1P50

500V P-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQPF1P50

TM

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are

Features

• -1.03A, -500V, R

• Low gate charge ( typical 11 nC)

• Low Crss ( typical 6.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 10.5Ω @VGS = -10 V

DS(on)

well suited for electronic lamp ballasts based on the
complementary half bridge topology.

S

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D

D

G

S

Absolute Maximum Ratings T

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

G

!!!!

!!!!

Symbol Parameter FQPF1P50 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-1.03 A

-0.65 A

-4.12 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

110 mJ

-1.03 A

2.8 mJ

-4.5 V/ns
28 W

- Derate above 25°C 0.22 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 4.46 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A2, December 2000

FQPF1P50

Elerical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -500 V, VGS = 0 V

DS

V

= -400 V, TC = 125°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-400 -- -- V

-- - -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -0.515 A

V

GS

= -50 V, ID = -0.515 A

V

DS

(Note 4)

-3.0 -- -5.0 V

-- 8.0 10.5 Ω

-- 1.03 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 40 50 pF
Reverse Transfer Capacitance -- 6.0 8.0 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 270 350 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 25 60 ns
Turn-Off Delay Time -- 27 65 ns
Turn-Off Fall Time -- 30 70 ns
Total Gate Charge
Gate-Source Charge -- 2.0 -- nC
Gate-Drain Charge -- 5.6 -- nC

= -250 V, ID = -1.5 A,

V

DD

= 25 Ω

R

G

V

= -400 V, ID = -1.5 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 9.0 30 ns

-- 11 14 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 187mH, IAS = -1.03A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -1.5A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- -1.03 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -4.12 A

= 0 V, IS = -1.03 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.7 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -1.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -5.0 V

-- 200 -- ns

(Note 4)

Rev. A2, December 2000

Typical Characteristics

FQPF1P50

V

GS

Top : -15. 0 V

-10.0 V

-8.0 V

0

-7.0 V

10

-6.5 V

-6.0 V
Botto m : -5. 5 V

-1

10

, Drain Current [A]

D

-I

-2

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Tes t

℃

= 25

2. T

C

1

10

-VDS, Drain-Source Voltage [V]

VGS = - 10V

VGS = - 20V

※

℃

Note : T

= 25

J

16

14

12

[Ω],

DS(on)

R

10

Drain-Source On-Resistance

8

6

01234

-ID , Drai n Curren t [A]

0

10

, Drain Current [A]

D

-I

-1

10

246810

℃

150

℃

25

※

℃

-55

Notes :

1. V

= -50V

DS

2. 250μs Pulse Tes t

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

℃

℃

150

, Reverse Drain Current [A]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Tes t

-VSD , Sou r c e-Drain Voltag e [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

600

500

400

300

200

Capacitance [pF]

100

0

-1

10

-VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -100V

VDS = -250V

VDS = -400V

※

Note : I

= -1.5 A

D

Rev. A2, December 2000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

※

Notes :

1. V

GS

C

0

10

2. f = 1 MHz

rss

1

10

= 0 V

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

024681012

QG, Tota l Gate Charge [n C]