Fairchild FQPF19N10 service manual

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FQPF19N10

FQPF19N10

100V N-Channel MOSFET

August 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter FQPF19N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.25 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 13.6A, 100V, R

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 32 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

!

!

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.1Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

13.6 A

9.6 A

54.4 A

220 mJ

13.6 A

3.8 mJ

6.0 V/ns
38 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 3.95 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, August 2000

FQPF19N10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 6.8 A

V

GS

= 40 V, ID = 6.8 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.078 0.1 Ω

-- 10 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 165 215 pF
Reverse Transfer Capacitance -- 32 40 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 600 780 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 150 310 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge
Gate-Source Charge -- 3.9 -- nC
Gate-Drain Charge -- 9.0 -- nC

= 50 V, ID = 19 A,

V

DD

= 25 Ω

R

G

V

= 80 V, ID = 19 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 7.5 25 ns

-- 19 25 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.8mH, IAS = 13.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 13.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 54.4 A

= 0 V, IS = 13.6 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 200 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 19 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 78 -- ns

(Note 4)

Rev. A, August 2000

Typical Characteristics

V

GS

Top : 15.0 V

1

10

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

1

10

℃

175

FQPF19N10

0

℃

25

10

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Te st

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

, Dra in Curre n t [A ]

D

I

-1

10

246810

VGS , Gate-Source Voltage [V]

℃

-55

※

Note s :

1. V

= 40V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0.30

0.24
VGS = 10V

],

Ω

0.18

[

DS(on)

R

0.12

Drain-Source On-Resistance

0.06

0.00

0 20406080

VGS = 20V

※

Note : T

℃

= 25

J

ID , Drain Curren t [A ]

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

℃

℃

25

175

VSD , Source-Drain Voltage [V]

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Tes t

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

1500

1200

900

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

600

Capacitance [pF]

300

0

-1

10

C

rss

0

10

10

1

※

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 4 8 12 16 20

QG, Tota l Gate Charge [n C]

VDS = 50V

VDS = 80V

※

Note : I

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

D

= 19A

Rev. A, August 2000©2000 Fairchild Semiconductor International