Fairchild FQPF17N08 service manual

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FQPF17N08

80V N-Channel MOSFET

January 2001

QFET

QFET

QFETQFET

FQPF17N08

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQPF17N08 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 80 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.2 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 11.2A, 80V, R

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 28 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.115Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

11.2 A

7.9 A

44.8 A

100 mJ

11.2 A

3.0 mJ

6.5 V/ns
30 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 5.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A1, January 2001

FQPF17N08

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 80 V, VGS = 0 V

DS

V

= 64 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

80 -- -- V

-- 0.08 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 5.6 A

V

GS

= 30 V, ID = 5.6 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.088 0.115 Ω

-- 5.13 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 120 155 pF
Reverse Transfer Capacitance -- 28 35 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 350 450 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 60 130 ns
Turn-Off Delay Time -- 15 40 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge
Gate-Source Charge -- 2.7 -- nC
Gate-Drain Charge -- 5.4 -- nC

= 40 V, ID = 16.5 A,

V

DD

= 25 Ω

R

G

V

= 64 V, ID = 16.5 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 4.8 20 ns

-- 12 15 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.1mH, IAS = 11.2A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 16.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 11.2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 44.8 A

= 0 V, IS = 11.2 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 92 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 16.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 55 -- ns

(Note 4)

Rev. A1, January 2001

Typical Characteristics

FQPF17N08

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

1

5.5 V

10

5.0 V
Bottom : 4.5 V

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

Note :

1. 250μs Pulse Test

℃

= 25

2. T

C

1

10

VDS, Drai n -Source Voltag e [V]

0.4

0.3

],

0.2

Ω

[

DS(ON)

R

0.1

Drain-Source On-Resistance

0.0
0 1020304050

VGS = 10V

VGS = 20V

※

Note : T

= 25

J

ID, Drain Current [A]

1

10

℃

175

0

10

℃

25

, Dra in Cu rrent [A]

D

I

-1

10

246810

℃

-55

※

Notes :

1. V

= 30V

DS

2. 250μs Pulse Test

VGS , Gate - Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

I

℃

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

175

℃

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Te st

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

900

750

600

450

300

Capacitance [pF]

150

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

C

iss

C

oss

C

rss

0

10

Notes :

= 0 V

1. V

GS

2. f = 1 MH z

1

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

024681012

QG, Tota l Gate Charge [n C]

VDS = 40V

VDS = 64V

※

Note : I

= 16.5A

D

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International Rev. A1, January 2001