Fairchild FQPF140N03L service manual

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FQPF140N03L

FQPF140N03L

30V LOGIC N-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FQPF140N03L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 30 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.41 W/°C

TO-220F

FQPF Series



TC = 25°C unless otherwise noted

= 25°C)

C

= 100°C)

C

Features

• 82A, 30V, R

• Low gate charge ( typical 73 nC)

• Low Crss ( typical 580 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.0045Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

82 A
58 A

330 A

±

20 V

710 mJ

82 A

6.2 mJ

7.0 V/ns
62 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 2.42 °CW
Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

Rev. A, April 2000

FQPF140N03L

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to

I

D

25°C
V

= 30 V, VGS = 0 V

DS

V

= 24 V, TC = 150°C

DS

= 20 V, VDS = 0 V

V

GS

V

= -20 V, VDS = 0 V

GS

30 -- -- V

-- 0.03 -- V/°C

-- -- 1

-- -- 10

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V, ID = 41 A

V

GS

V

= 5 V, ID =41 A

GS

V

= 15 V, ID = 41 A

DS

(Note 4)

1.0 -- 2. 5 V

----0.0038

0.005

0.0045

0.006

-- 73 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 2090 2720 pF
Reverse Transfer Capacitance -- 580 755 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 3400 4420 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 770 1500 ns
Turn-Off Delay Time -- 25 60 ns
Turn-Off Fall Time -- 250 510 ns
Total Gate Charge
Gate-Source Charge -- 29.5 -- nC
Gate-Drain Charge -- 38.5 -- nC

= 15 V, ID = 70 A,

V

DD

Ω

= 25

R

G

= 24 V, ID = 140 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 60 130 ns

-- 73 95 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 105µH, I

3. ISD  140A, di/dt  300A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 82 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 330 A

= 0 V, IS = 82 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 105 -- nC

= 82A, VDD = 15V, RG = 25

AS

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 140 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.5 V

-- 70 -- ns

Rev. A, April 2000

Typical Characteristics

FQPF140N03L

V

GS

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V
Botto m : 3 .0 V

2

10

, Drain Current [A]

D

I



Note s :

1. 250s Pulse Test



= 25

1

10

-1

10

2. T

C

0

10

VDS, Drain-Source Voltage [V]

12.5

10.0

],



7.5

[m

DS(ON)

5.0

R

2.5

Drain-Source On-Resistance

0.0
0 100 200 300 400 500

VGS = 5V

VGS = 10V

ID, Drain Current [A]



Note : T

2

10

1

10

, Drain Current [A]



175

D

I



25



0

1

10

10

0246810

-55



Note s :

1. V

= 15V

DS

2. 250s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2

10

1

10

, Reverse Drain Current [A]

DR

I



= 25

J

175

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0





25

VSD, Source-Drain voltage [V]



Note s :

= 0V

1. V

GS

2. 250s Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

12000

10000

8000

6000

4000

Capacitance [pF]

2000

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C
C
C

C

oss

C

iss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd



Notes :

= 0 V

1. V

GS

2. f = 1 M H z

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 15V

VDS = 24V



Note : I

= 140A

D

Rev. A, April 2000

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 255075100125150

QG, Total Gate Charge [nC]