Fairchild FQPF13N10L service manual

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FQPF13N10L

100V LOGIC N-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQPF13N10L

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQPF13N10L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.2 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 8.7A, 100V, R

• Low gate charge ( typical 8.7 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.18Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

8.7 A

6.15 A

34.8 A

95 mJ

8.7 A

3.0 mJ

6.0 V/ns
30 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 5.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A4, December 2000

FQPF13N10L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 150°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.09 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 4.35 A

GS

= 5 V, ID = 4.35 A

V

GS

V

= 30 V, ID = 4.35 A

DS

(Note 4)

1.0 -- 2.0 V

0.142

--

0.158

0.18

0.2

-- 8.3 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 95 125 pF
Reverse Transfer Capacitance -- 20 25 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 400 520 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 220 450 ns
Turn-Off Delay Time -- 22 55 ns
Turn-Off Fall Time -- 72 150 ns
Total Gate Charge
Gate-Source Charge -- 2.0 -- nC
Gate-Drain Charge -- 5.3 -- nC

= 50 V, ID = 12.8 A,

V

DD

= 25 Ω

R

G

= 80 V, ID = 12.8 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 7.5 25 ns

-- 8.7 12 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.88mH, IAS = 8.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤12.8A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 8.7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 34.8 A

= 0 V, IS = 8.7 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.17 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 12.8 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.5 V

-- 75 -- ns

Rev. A4, December 2000

Typical Characteristics

FQPF13N10L

V

GS

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

1

10

4.0 V

3.5 V
Bottom : 3.0 V

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Te st

℃

= 25

2. T

C

1

10

VDS, Drain-Source Voltage [V]

VGS = 5V

VGS = 10V

※

℃

Note : T

= 25

J

0.8

0.6

],

0.4

Ω

[

DS(ON)

R

0.2

Drain-Source On-Resistance

0.0
0 10203040

ID, Drain Current [A]

1

10

℃

0

10

℃

25

, Dra in Curre n t [A]

D

I

-1

10

0246810

℃

-55

※

Notes :

1. V

= 30V

DS

2. 250μs Pulse Test

175

VGS , Gate -Source Voltag e [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

I

10

℃

175

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Tes t

VSD, Sou r c e -Drain v o ltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

1000

800

600

400

Capacitance [pF]

200

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

※

Notes :

1. V

2. f = 1 MHz

1

10

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0481216

QG, Tota l Gate Charge [n C]

VDS = 50V

VDS = 80V

※

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

Note : I

= 12.8A

D

Rev. A4, December 2000©2000 Fairchild Semiconductor International