Fairchild FQPF13N10 service manual

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FQPF13N10

100V N-Channel MOSFET

January 2001

QFET

QFET

QFETQFET

FQPF13N10

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQPF13N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.2 W/°C

TO-220F

FQPF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 8.7A, 100V, R

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.18Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

8.7 A

6.15 A

34.8 A

95 mJ

8.7 A

3.0 mJ

6.0 V/ns
30 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 5.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A1, January 2001

FQPF13N10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.09 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 4.35 A

V

GS

= 40 V, ID = 4.35 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.142 0.18 Ω

-- 6.1 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 100 130 pF
Reverse Transfer Capacitance -- 20 25 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 345 450 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 55 120 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge
Gate-Source Charge -- 2.5 -- nC
Gate-Drain Charge -- 5.1 -- nC

= 50 V, ID = 12.8 A,

V

DD

= 25 Ω

R

G

V

= 80 V, ID = 12.8 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 5 20 ns

-- 12 16 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.88mH, IAS = 8.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 8.7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 34.8 A

= 0 V, IS = 8.7 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.17 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 12.8 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 72 -- ns

(Note 4)

Rev. A1, January 2001

Typical Characteristics

FQPF13N10

V

GS

Top : 15 .0 V

10.0 V

8.0 V

1

10

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

0.8

0.6

],

0.4

Ω

[

DS(ON)

R

0.2

Drain-Source On-Resistance

0.0
0 10203040

VGS = 10V

VGS = 20V

※

Note : T

℃

= 25

J

ID, Drain Current [A]

1

10

℃

, Dra in Curre n t [A ]

D

I

10

175

0

10

℃

25

℃

-55

-1

246810

※

Note s :

1. V

= 40V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

℃

175

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD, Sou r c e-Drain voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

900

750

600

450

300

Capacitance [pF]

150

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

※

Notes :

1. V

C

rss

0

10

2. f = 1 MH z

1

10

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

024681012

QG, Tota l Gate Charge [n C]

VDS = 50V

VDS = 80V

※

Note : I

= 12.8A

D

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International Rev. A1, January 2001