Fairchild FQPF12N60CT service manual

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FQPF12N60CT

600V N-Channel MOSFET

FQPF12N60CT 600V N-Channel MOSFET

September 2006

®

QFET

Features

• 12A, 600V, R

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 21 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.65Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

TO-220F Potted

GSD

FQPF Series

S

Absolute Maximum Ratings

Symbol Parameter FQPF12N60CT Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

* Drain current limited by maximum junction temperature

Drain-Source Voltage 600 V

Drain Current - Continuous (TC = 25°C) 12* A

- Continuous (T

Drain Current - Pulsed
Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 51 W

- Derate above 25°C 0.41 W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 7.4* A

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

48* A

870 mJ

12 A

5.1 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FQPF12N60CT Units

R

θJC

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQPF12N60CT Rev. A

Thermal Resistance, Junction-to-Case 2.43 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQPF12N60CT FQPF12N60CT TO-220F -- -- 50

FQPF12N60CT 600V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 12A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C

Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA

= 480 V, TC = 125°C -- -- 10 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A -- 0.53 0.65 Ω

Forward Transconductance VDS = 40 V, ID =6 A (Note 4) -- 13 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 182 235 pF

f = 1.0 MHz

-- 1760 2290 pF

Reverse Transfer Capacitance -- 21 28 pF

Turn-O n Delay Time VDD = 300 V, ID = 12A,

R

= 25 Ω

Turn-O n Rise Time --

Turn-Off Delay Time --

Turn-Off Fall Time --

G

(Note 4, 5)

Total Gate Charge VDS = 480 V, ID = 12A,

V

= 10 V

Gate-Source Charge --

Gate-Drain Charge --

GS

(Note 4, 5)

--

--

30 70

85 180

140 290

90 190

48 63

8.5

21

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 12 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 4.9 -- µC

Starting TJ = 25°C

DSS,

F

-- 420 -- ns

ns

ns

ns

ns

nC

FQPF12N60CT Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQPF12N60CT 600V N-Channel MOSFET

, Drain Current [A]
I

1

10

D

0

10

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

0

10

VDS, Drai n-Source Voltage [ V]

Notes :※

1. 250µ s Pulse Test

2. T

= 25℃

C

1

10

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Source Voltage [V]

-55oC

Note s :※

1. VDS = 40V

2. 250µ s Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

25℃

Note s :※

1. VGS = 0V

2. 250µ s Pulse Test

1.5

VGS = 10V

[Ω ],

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0 5 10 15 20 25 30 35

ID, Drain Current [A]

VGS = 20V

Note : T※J = 25℃

1

10

0

10

150℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0. 6 0.8 1.0 1.2 1. 4

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

FQPF12N60CT Rev. A

C

iss

C

oss

C

rss

C

iss

C

oss

C

rss

0

10

VDS, Drai n-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

= Cds + C

gd

= C

gd

Note s ;※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 1020304050

QG, Total Gate Charge [nC]

3 www.fairchildsemi.com

VDS = 120V

VDS = 300V

VDS = 480V

Note : I※D = 12A