Fairchild FQPF12N60 service manual

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FQPF12N60

FQPF12N60

600V N-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

GSD

Absolute Maximum Ratings

Symbol Parameter FQPF12N60 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 600 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.44 W/°C

TO-220F

FQPF Series



TC = 25°C unless otherwise noted

= 25°C)

C

= 100°C)

C

Features

• 5.8A, 600V, R

• Low gate charge ( typical 42 nC)

• Low Crss ( typical 25 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.7 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

5.8 A

3.7 A
23 A

±

30 V

790 mJ

5.8 A

5.5 mJ

4.5
55 W

300 °C

Vns

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 2.27 °CW
Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

Rev. A, April 2000

FQPF12N60

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

V

= 600 V, VGS = 0 V

DS

V

= 480 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

V

= -30 V, VDS = 0 V

GS

600 -- -- V

-- 0.71 -- V/°C

-- -- 10

-- -- 100

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V, ID = 2.9 A

V

GS

= 50 V, ID = 2.9 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.55 0.7

-- 6.0 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 200 270 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

Reverse Transfer Capacitance -- 25 35 pF

-- 1480 190 0 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

Turn-On Delay Time
Turn-On Rise Time -- 115 240 ns

= 300 V, ID = 12 A,

V

DD

= 25

G

Ω

R

Turn-Off Delay Time -- 95 200 ns
Turn-Off Fall Time -- 85 180 ns

g
gs
gd

Total Gate Charge
Gate-Source Charge -- 8.6 -- nC
Gate-Drain Charge -- 21 -- nC

V

= 480 V, ID = 12 A,

DS

V

= 10 V

GS

(Note 4, 5)

(Note 4, 5)

-- 30 70 ns

-- 42 54 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 43mH, I

3. ISD  12A, di/dt  200A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 23 A

= 0 V, IS = 5.8 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 3.5 --

= 5.8A, VDD = 50V, RG = 25

AS

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 12 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.4 V

-- 380 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

V

GS

Top : 15 V

FQPF12N60

1

10

0

10

, Drain Current [A]

D

I

10

10 V

8.0 V

7.0 V

6.5 V

6.0 V
Botto m : 5 .5 V

-1



Note s :

1. 250s Pulse Test



= 25

2. T

C

0

10

1

10

VDS , Drain-Source Voltage [V]

Figure 1. On-Region Char act er i stic s

1.8

1.6

1.4

1.2

],

Ω

[

1.0

DS(on)

0.8

R

VGS = 10V

VGS = 20V

1

10



150



0

10

, Drain Current [A]

D

I

-1

10

246810

25

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

1

10

0

10



-55



Notes :

= 50V

1. V

DS

2. 250s Pulse Test

0.6

0.4

Drain-Source On-Resistance

0.2

0.0
0 5 10 15 20 25 30 35

ID , Drain Curren t [A]

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6



150



25

VSD , Source-Drain Voltage [V]



Note s :

= 0V

1. V

GS

2. 250s Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

3000

2400

1800

1200

Capacitance [pF]

600

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd



Note s :

1. V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30 35 40 45

QG, Tota l Gate Charge [n C]

VDS = 120V

VDS = 300V

VDS = 480V



Note : I

= 12 A

D

Rev. A, April 2000