Fairchild FQP11N50CF, FQPF11N50CF service manual
FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
July 2005
FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET
TM
FRFET
Features
• 11A, 500V, R
• Low Gate Charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• Fast Recovery Body Diode (typical 90ns)
= 0.55Ω @VGS = 10 V
DS(on)
G
SD
TO-220
FQP Series
D
G
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
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S
TO-220F
FQPF Series
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S
Absolute Maximum Ratings
Symbol Parameter FQP11N50CF FQPF11N50CF Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
, T
J
STG
T
L
* Drain current limited by maximum junction temperature
Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C) 11 11 * A
- Continuous (T
Drain Current - Pulsed
= 100°C) 7 7 * A
C
(Note 1)
44 44 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Note 2)
(Note 1)
(Note 1)
(Note 3)
670 mJ
11 A
19.5 mJ
4.5 V/ns
Power Dissipation (TC = 25°C) 195 48 W
- Derate above 25°C 1.56 0.39 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
300 °C
1/8" from case for 5 seconds
Thermal Characteristics
Symbol Parameter FQP11N50CF FQPF11N50CF Units
R
θJC
R
θJS
R
θJA
©2005 Fairchild Semiconductor Corporation
FQP11N50CF/FQPF11N50CF Rev. A
Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
1
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQP11N50CF FQP11N50CF TO-220 -- -- 50
FQPF11N50CF FQPF11N50CF TO-220F -- -- 50
FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET
Electrical Characteristics
TC = 25°C unless other wise note d
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10mH, I
3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
DSS
Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µA
V
= 400 V, TC = 125°C -- -- 100 µA
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source
VGS = 10 V, ID = 5.5 A -- 0.48 0.55 Ω
On-Resistance
Forward Transconductance VDS = 40 V, ID = 5.5 A
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 185 235 pF
f = 1.0 MHz
(Note 4)
-- 15 -- S
-- 1515 2055 pF
Reverse Transfer Capacitance -- 25 30 pF
Turn-On Delay Time VDD = 250 V, ID = 11 A,
R
= 25 Ω
Turn-On Rise Time -- 70 150 ns
G
-- 24 57 ns
Turn-Off Delay Time -- 120 250 ns
Turn-Off Fall Time -- 75 160 ns
Total Gate Charge VDS = 400 V, ID = 11A,
= 10 V
V
Gate-Source Charge -- 8 -- nC
Gate-Drain Charge -- 19 -- nC
GS
(Note 4 , 5)
(Note 4, 5)
-- 43 55 nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 11 A,
/ dt = 100 A/µs
dI
Reverse Recovery Charge -- 1.5 -- µC
= 11A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
AS
Starting TJ = 25°C
DSS,
F
(Note 4)
-- 90 -- ns
FQP11N50CF/FQPF11N50CF Rev. A
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET
10
10
, Drain Current [A]
D
I
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
6.5 V
6.0 V
5.5 V
Bottom : 4.5 V
0
-1
-1
10
GS
0
10
VDS, Drain-Source Voltage [V]
1
150°C
10
25°C
, Drain Current [A]
D
I
0
10
2 4 6 8 10 12
* Notes :
1. 250
2. T
1
10
µ
s Pulse Test
= 25°C
C
VGS, Gate-Source Voltage [V]
-55°C
* Notes :
1. V
= 40V
DS
2. 250
µ
s Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
1.0
0.9
0.8
],
0.7
Ω
[
DS(ON)
R
VGS = 10V
0.6
VGS = 20V
0.5
Drain-Source On-Resistance
0.4
0.3
0 5 10 15 20 25 3 0 35 40
* Note : TJ = 25°C
ID, Drai n Current [A]
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
150°C
25°C
VSD, Source- Drain vol tage [ V]
* Notes :
1. V
= 0V
GS
2. 250
µ
s Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
4000
3000
C
iss
C
2000
Capacitances [pF]
1000
0
-1
10
oss
C
rss
0
10
VDS, Drain -Source Voltag e [V]
FQP11N50CF/FQPF11N50CF Rev. A
C
= Cgs + Cgd (Cds = shorte d)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
* Note ;
= 0 V
1. V
GS
2. f = 1 MHz
1
10
3
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 1020304050
VDS = 100V
VDS = 250V
VDS = 400V
QG, Total Gate Charge [nC]
* Note : ID = 11A
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