FQP11N40C/FQPF11N40C
400V N-Channel MOSFET
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
May 2008
®
QFET
Features
• 10.5 A, 400V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.5 Ω @VGS = 10 V
DS(on)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
{
{
●
●
◀
◀
▲
▲
●
{
{
G
G
D
S
TO-220
FQP Series
D
G
S
TO-220F
FQPF Series
●
●
●
{
{
S
Absolute Maximum Ratings
Symbol Parameter FQP11N40C FQPF11N40C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
TJ, T
STG
T
L
* Drain current limited by maximum junction temperature
Drain-Source Voltage 400 V
Drain Current - Continuous (TC = 25°C) 10.5 10.5 * A
- Continuous (TC = 100°C) 6.6 6.6 * A
Drain Current - Pulsed
(Note 1)
42 42 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Note 2)
(Note 1)
(Note 1)
(Note 3)
360 mJ
11 A
13.5 mJ
4.5 V/ns
Power Dissipation (TC = 25°C) 135 44 W
- Derate above 25°C 1.07 0.35 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
300 °C
1/8" from case for 5 seconds
-
Thermal Characteristics
Symbol Parameter FQP11N40C FQPF11N40C Units
R
θJC
R
θCS
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQP11N40C/FQPF11N40C Rev. C1
Thermal Resistance, Junction-to-Case 0.93 2.86 °C/W Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQP11N40C FQP11N40C TO-220 -- -- 50
FQPF11N40C FQPF11N40C TO-220F -- -- 50
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 400 -- -- V
/
Breakdown Voltage Temperature
DSS
Coefficient
ID = 250 µA, Referenced to 25°C -- 0.54 -- V/°C
Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 µA
VDS = 320 V, TC = 125°C -- -- 10 µA
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
Static Drain-Source
VGS = 10 V, ID = 5.25 A -- 0.43 0.53 Ω
On-Resistance
Forward Transconductance VDS = 40 V, ID = 5.25 A (Note 4) -- 7.1 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 250 325 pF
Reverse Transfer Capacitance -- 85 110 pF
f = 1.0 MHz
Turn-On Delay Time VDD = 200 V, ID = 10.5 A,
Turn-On Rise Time -- 89 190 ns
RG = 25 Ω
-- 840 1090 pF
-- 14 40 ns
Turn-Off Del ay Time -- 81 170 ns
Turn-Off Fal l Time -- 81 170 ns
Total Gate Charge VDS = 320 V, ID = 10.5 A,
Gate-Source Charge -- 4 -- nC
VGS = 10 V
Gate-Drain Charge -- 15 -- nC
(Note 4, 5)
-- 28 35 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 42 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A -- -- 1.4 V
Reverse Recovery Time
Reverse Recovery Charge
Starting TJ = 25°C
DSS,
VGS = 0 V, IS = 10.5 A,
dIF / dt = 100 A/µs (Note 4 )
-- 290 -- ns
-- 2.4 -- µC
FQP11N40C/FQPF11N40C Rev. C1
2 www.fairchildsemi.com
Typical Performance Characteristics
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
, Drain Current [A]
D
I
1
10
0
10
-1
10
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
VDS, Drain-Source Voltage [ V]
1
10
150°C
, Drain Current [A]
Notes :
µs Pulse Test
1. 250
2. T
= 25°C
C
1
10
I
25°C
0
10
D
-1
10
246810
VGS, Gate-Source Voltage [V]
-55°C
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
25°C
Notes :
1. V
2. 250
2.0
VGS = 10V
1.5
[Ω],
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0 5 10 15 20 25 30 35 40
ID, Drain Curr ent [A]
VGS = 20V
Note : TJ = 25°C
1
10
0
10
150°C
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-Drai n voltage [ V]
Notes :
1. V
2. 250
= 0V
GS
µs Pulse Test
= 40V
DS
µs Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2000
1800
1600
1400
1200
1000
800
600
Capacitance [pF]
400
200
0
-1
10
FQP11N40C/FQPF11N40C Rev. C1
0
10
VDS, Drain- Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
C
rss
Notes ;
1. V
= 0 V
GS
2. f = 1 MHz
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25 30
VDS = 100V
VDS = 250V
VDS = 400V
Note : ID = 10.5A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
1.1
3.0
2.5
2.0
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
1.0
, (Normalized)
BV
DSS
0.9
Note s :
1. V
2. I
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperatur e [°C]
= 0 V
GS
= 250µA
D
1.5
, (Normalized)
1.0
DS(ON)
R
0.5
Drain-Source On-Resistance
0.0
-100 -50 0 50 100 150 200
TJ, Junct ion Temperature [°C]
Notes :
1. V
2. I
= 10 V
GS
= 5.25 A
D
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
of FQP11N40C of FQPF11N40C
2
10
Operation i n This Area
is Limi ted by R
DS(on)
2
10
Operation i n This Area
is Limit ed by R
10 µs
100 µs
1
10
0
10
, Drain Current [A]
D
I
-1
10
0
10
Notes :
1. T
= 25°C
C
2. T
= 150°C
J
3. Singl e Pulse
1
10
100 ms
DC
10 ms
1 ms
2
10
3
10
VDS, Drain- Source Voltage [V]
1
10
0
10
, Drain Current [A]
D
I
-1
10
0
10
Notes :
1. T
2. T
3. Single Pul se
VDS, Drain- Source Voltage [V]
= 25°C
C
= 15°C
J
10
DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
1
2
10
3
10
Figure 10. Maximum Drain Current
12
10
8
6
4
, Drain Current [A]
D
I
2
0
25 50 75 100 125 150
TC, Case Temperatur e [°C]
FQP11N40C/FQPF11N40C Rev. C1
4 www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 11-1. ransient Thermal Response Curve of FQP11N40C
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
0
10
D=0.5
0.2
-1
0.1
10
0.05
N ote s :
(t) = 0.9 3° C/W Max.
1. Z
θJC
2. D uty F acto r, D= t
3. TJM - TC = PDM * Z
1/t2
(t)
θJC
0.02
(t), Thermal Response
θJC
Z
0.01
-2
10
-5
10
single pulse
-4
10
-3
10
-2
10
P
DM
t
1
t
2
-1
10
0
10
1
10
t1, S q u are W ave P u lse D uratio n [se c ]
Figure 11-2. ransient Thermal Response Curve of FQPF11N40C
D=0.5
0
10
0.2
0.1
0.05
-1
10
0.02
0.01
(t), Thermal Response
θ JC
Z
-2
10
-5
10
single pulse
-4
10
-3
10
-2
10
t1, Square W ave Pulse D uration [sec]
Notes :※
1. Z
(t) = 2.86 /W M ax.℃
θ JC
2. D uty Fa cto r, D =t1/t
3. TJM - TC = PDM * Z
P
DM
t
1
t
2
-1
10
10
2
(t)
θ JC
0
1
10
FQP11N40C/FQPF11N40C Rev. C1
5 www.fairchildsemi.com
12V
12V
200nF
200nF
3mA
3mA
50KΩ
50KΩ
V
V
Gate Charge Test Circuit & Waveform
V
V
GS
GS
GS
300nF
300nF
Same Type
Same Type
as DUT
as DUT
DUT
DUT
V
V
DS
DS
GS
10V
10V
Resistive Switching Test Circuit & Waveforms
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Q
Q
g
g
Q
Q
gs
gs
Q
Q
gd
gd
Charge
Charge
10V
10V
10V
10V
R
R
L
DUT
DUT
L
V
V
DD
DD
V
V
DS
DS
V
V
GS
GS
R
R
G
G
V
V
DS
DS
90%
90%
10%
10%
V
V
GS
GS
t
t
d(on)tr
d(on)tr
t
t
on
on
t
t
d(off )
d(off )
t
t
f
f
t
t
off
off
Unclamped Inductive Switching Test Circuit & Waveforms
BV
BV
DSS
L
LL
V
V
DS
DS
BV
BV
DSS
V
V
DSS
I
I
AS
AS
DD
DD
I
IDI
D
D
R
R
G
G
DUT
DUT
t
t
p
p
V
V
DD
DD
1
1
1
1
----
----
----
----
E
E
=LI
E
=LI
=LI
AS
AS
AS
2
2
2
2
2
2
2
AS
AS
AS
(t)
(t)
I
I
D
D
t
t
p
p
DSS
--------------------
-------------------BV
BV
DSS-VDD
DSS-VDD
Time
Time
V
(t)
V
(t)
DS
DS
FQP11N40C/FQPF11N40C Rev. C1
6 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
DUT
I
I
SD
SD
Driver
Driver
R
R
G
G
V
V
GS
GS
+
V
V
DS
DS
_
_
L
LL
Same Type
Same Type
as DUT
as DUT
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontrolled by pulse period
•ISDcontrolled by pulse period
G
G
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
V
V
DD
DD
V
V
GS
GS
( Driver )
( Driver )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, Body Diode Forward Current
IFM, Body Diode Forward Current
I
I
RM
RM
Body Diode Reverse Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
V
SD
SD
Body Diode
Body Diode
Forward Voltage Drop
Forward Voltage Drop
di/dt
di/dt
10V
10V
V
V
DD
DD
FQP11N40C/FQPF11N40C Rev. C1
7 www.fairchildsemi.com
Mechanical Dimensions
4.50
0
(1.70)
9.20
13.08
0
5
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
TO-220
±0.20
±0.20
±0.10
1.30
(1.46)
(1.00)
1.27
±0.10
9.90
(8.70)
ø3.60
±0.20
±0.10
(45°)
1.52
(3.70)(3.00)
±0.10
±0.10
2.80
±0.20
18.95MAX.
15.90
±0.30
±0.2
+0.1
1.30
–0.0
2.54TYP
[2.54
±0.20
]
10.00
±0.20
0.80
±0.10
2.54TYP
[2.54
±0.20
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
FQP11N40C/FQPF11N40C Rev. C1
8 www.fairchildsemi.com
Mechanical Dimensions (Continued)
0
2.54
0
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
TO-220F
10.16 ±0.20
(7.00)
ø3.18 ±0.10
±0.20
(0.70)
3.30 ±0.1
6.68 ±0.20
(1.00x45°)
15.80 ±0.20
15.87 ±0.20
MAX1.47
0.80 ±0.10
9.75 ±0.30
(30°)
0.35 ±0.10
2.54TYP
±0.20]
[2.54
FQP11N40C/FQPF11N40C Rev. C1
#1
9.40 ±0.20
2.54TYP
±0.20]
[2.54
+0.10
0.50
–0.05
2.76 ±0.2
4.70 ±0.20
Dimensions in Millimeters
9 www.fairchildsemi.com
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™ *
™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FlashWriter
®
*
®
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
PDP-SPM™
Power-SPM™
PowerTrench
SM
Programmable Active Droop™
QFET
®
®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
10 www.fairchildsemi.com
FQP11N40C/FQPF11N40C Rev. C1
Loading...