Fairchild FQP9N50C, FQPF9N50C service manual

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FQP9N50C/FQPF9N50C

500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

Features

• 9 A, 500V, R

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 24 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.8 Ω @VGS = 10 V

DS(on)

QFET

D

!!!!

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FQP9N50C/FQPF9N50C

TM

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S

G

SD

TO-220

FQP Series

Absolute Maximum Ratings T

D

G

S

= 25°C unless otherwise noted

C

TO-220F

FQPF Series

!!!!

!!!!

G

Symbol Parameter FQP9N50C FQPF9N50C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

99 *A

5.4 5.4 * A
36 36 * A

Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

360 mJ

9A

13.5 mJ

4.5 V/ns

135 44 W

- Derate above 25°C 1.07 0.35 W/°C

T

, T

J

STG

T

L

* Drain current limited by maximum junction temperature

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FQP9N50C FQPF9N50C Units

R

θJC

R

θCS

R

θJA

©2003 Fairchild Semiconductor Corporation Rev. A, June 2003

Thermal Resistance, Junction-to-Case 0.93 2.86 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

FQP9N50C/FQPF9N50C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 500 V, VGS = 0 V

DS

V

= 400 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

500 -- -- V

-- 0.57 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 4.5 A

V

GS

= 40 V, ID = 4.5 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.65 0.8 Ω

-- 6.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 130 170 pF
Reverse Transfer Capacitance -- 24 30 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 790 1030 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 65 140 ns
Turn-Off Delay Time -- 93 1 9 5 n s
Turn-Off Fall Time -- 64 125 ns
Total Gate Charge
Gate-Source Charge -- 4 -- nC
Gate-Drain Charge -- 15 -- nC

= 250 V, ID = 9 A,

V

DD

= 25 Ω

R

G

(Note 4, 5)

V

= 400 V, ID = 9 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 18 45 ns

-- 28 35 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 8 mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2003 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 9 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A

= 0 V, IS = 9 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.95 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 9 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 335 -- ns

(Note 4)

Rev. A, June 2003

Typical Characteristics

FQP9N50C/FQPF9N50C

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

10

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

10

VDS, Drain-Source Voltage [V]

2.0

1.5

],

'

[

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0 5 10 15 20 25

VGS = 10V

ID, Drain Current [A]

$

Notes :

1. 250&s Pulse Test

%

2. T

= 25

C

1

VGS = 20V

$

= 25

Note : T

J

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

$

Notes :

1. V

= 40V

DS

2. 250&s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

%

, Reverse Drain Current [A]

DR

%

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

%

25

$

Notes :

1. V

= 0V

GS

2. 250&s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

2000

1600

1200

800

Capacitance [pF]

400

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2003 Fairchild Semiconductor Corporation

C

iss

C

oss

C

rss

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= C

+ Cgd (Cds = shorted)

gs

= Cds + C

= C

gd

$

1. V

2. f = 1 MHz

1

10

gd

Notes ;

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 100V

VDS = 250V

VDS = 400V

$

= 9A

Note : I

D

Rev. A, June 2003

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Tota l Gate Charge [ nC]