Fairchild FQP8N90C, FQPF8N90C service manual
FQP8N90C/FQPF8N90C
900V N-Channel MOSFET
FQP8N90C/FQPF8N90C 900V N-Channel MOSFET
January 11, 2006
®
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
G
D
S
TO-220
FQP Series
Absolute Maximum Ratings T
Symbol Parameter FQP8N90C FQPF8N90C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
TJ, T
STG
T
L
* Drain current limited by maximum junction temperature.
Drain-Source Voltage 900 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8∀ from case for 5 seconds
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Derate above 25°C 1.37 0.48 W/°C
D
G
= 25°C unless otherwise noted
C
Features
• 6.3A, 900V, R
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 12 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
S
TO-220F
FQPF Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
DS(on)
6.3 6.3 * A
3.8 3.8 * A
25 25 * A
171 60 W
= 1.9Ω @VGS = 10 V
D
G
S
850 mJ
6.3 A
17.1 mJ
4.0 V/ns
300 °C
Thermal Characteristics
Symbol Parameter FQP8N90C FQPF8N90C Units
R
θJC
R
θJS
R
θJA
©2006 Fairchild Semiconductor Corporation
FQP8N90C/FQPF8N90C Rev. B
Thermal Resistance, Junction-to-Case 0.73 2.08 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
www.fairchildsemi.com
FQP8N90C/FQPF8N90C 900V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
900 -- -- V
-- 0.95 -- V/°C
-- -- 10 µA
-- -- 100 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.15 A
VDS = 50 V, ID = 3.15 A (Note 4)
3.0 -- 5.0 V
-- 1.6 1.9 Ω
-- 5.5 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 130 170 pF
Reverse Transfer Capacitance -- 12 15 pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1600 2080 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 110 230 ns
VDD = 450 V, ID = 8 A,
RG = 25 Ω
-- 40 90 ns
Turn-Off Delay Time -- 70 150 ns
Turn-Off Fall Time -- 70 150 ns
Total Gate Charge
Gate-Source Charge -- 10 -- nC
Gate-Drain Charge -- 14 -- nC
(Note 4, 5)
VDS = 720 V, ID = 8 A,
VGS = 10 V
(Note 4, 5)
-- 35 45 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 40mH, IAS = 6.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 6.3 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 5.8 -- µC
Starting TJ = 25°C
DSS,
VGS = 0 V, IS = 6.3 A
VGS = 0 V, IS = 8 A,
dIF / dt = 100 A/µs (Not e 4)
-- -- 1.4 V
-- 530 -- ns
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Typical Characteristics
FQP8N90C/FQPF8N90C 900V N-Channel MOSFET
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
10
6.5 V
6.0 V
Bottom : 5.5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
Notes :∝
1. 250レs Pulse Test
2. T
1
10
VDS, Drai n-Source Voltage [V]
4.0
3.5
3.0
],
[ヘ
2.5
DS(ON)
R
2.0
Drain-Source On-Resistance
1.5
1.0
0 5 10 15 20
VGS = 10V
VGS = 20V
ID, Drai n Current [ A]
= 25∩
C
Note : T∝J = 25∩
1
10
25oC
150oC
-55oC
Notes :∝
1. VDS = 50V
2. 250
レs Pulse Test
0
10
, Drain Current [A]
D
I
-1
10
246810
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
150∩
25∩
Notes :∝
1. VGS = 0V
2. 250
レs Pulse Test
VSD, Source-Drain vol tage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
Capacitance [pF]
500
0
-1
10
VDS, Drai n-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
= C
rss
C
iss
C
oss
C
rss
0
10
10
Figure 5. Capacitance Characteristics
gd
1
gd
Notes :∝
1. VGS = 0 V
2. f = 1 MHz
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
VDS = 180V
VDS = 450V
VDS = 720V
Note : I∝D = 8A
Figure 6. Gate Charge Characteristics
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