Fairchild FQP8N80C, FQPF8N80C service manual

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU

800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

G

SD

TO-220

FQP Series

D

G

Features

• 8A, 800V, R

• Low gate charge ( typical 35 nC)

• Low Crss ( typical 13 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

RoHS Compliant

•

S

DS(on)

TO-220F

FQPF Series

= 1.55Ω @V

G

GS

!!!!

January 2009

QFET

= 10 V

D

!!!!

●●●●

◀◀◀◀

▲▲▲▲

●●●●

!!!!

S

TM

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQP8N80C FQPF8N80C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 800 V

Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

88 *A

5.1 5.1 * A

32 32 * A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)

(Note 1)

(Note 3)

850 mJ

8A

17.8 mJ

4.5 V/ns

178 59 W

- Derate above 25°C 1.43 0.48 W/°C

, T

T

J

STG

T

L

* Drain current limited by maximum junction temperature.

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FQP8N80C FQPF8N80C Units

R

θJC

R

θJS

R

θJA

Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, I

GS

= 250 µA, Referenced to 25°C

I

D

V

= 800 V, VGS = 0 V

DS

= 640 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

= 250 µA

D

800 -- -- V

-- 0.5 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

= VGS, I

DS

V

GS

V

DS

D

= 10 V, ID = 4 A

= 50 V, ID = 4 A

= 250 µA

(Note 4)

3.0 -- 5.0 V

-- 1.29 1.55 Ω

-- 5.6 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 135 175 pF

Reverse Transfer Capacitance -- 13 17 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1580 2050 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 110 230 ns

Turn-Off Delay Time -- 65 140 ns

Turn-Off Fall Time -- 70 150 ns

Total Gate Charge

Gate-Source Charge -- 10 -- nC

Gate-Drain Charge -- 14 -- nC

V

= 400 V, ID = 8 A,

DD

R

= 25 Ω

G

(Note 4, 5)

V

= 640 V, ID = 8 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 40 90 ns

-- 35 45 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 25mH, IAS = 8A, VDD = 50V, R

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 2

Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time Reverse Recovery Charge -- 8.2 -- µC

≤ 8A, di/dt ≤ 200A/µs, V

= 25 Ω, Starting T

G

≤ BV

DD

DSS,

= 25°C

J

Starting TJ = 25°C

V

= 0 V, IS = 8 A

GS

= 0 V, IS = 8 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.4 V

-- 690 -- ns

(Note 4)

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Typical Characteristics

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

V

GS

Top : 15.0 V

10.0 V

8.0 V

1

10

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

VGS = 20V

VGS = 10V

※

Note : T

℃

= 25

J

3.0

2.5

],

Ω

[

2.0

DS(ON)

R

1.5

Drain- Source On-Resistance

1.0 048121620

ID, Drain Current [ A]

1

10

150oC

0

10

, Drain Current [A]

D

I

-1

10

246810

25oC

-55oC

※

Notes :

1. V

2. 250μs Pulse Test

= 50V

DS

VGS, Gate-Sou rce Vol tage [ V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1

10

0

10

℃

, Rev erse Dr ain Cur rent [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD, Sourc e-Drai n voltage [ V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 160V

VDS = 400V

VDS = 640V

※

Note : I

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

C

iss

C

oss

C

rss

0

10

gd

10

※

1. V

2. f = 1 MHz

1

Notes :

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

010203040

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 8A

D

www.fairchildsemi.com FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 3

Typical Characteristics

(Continued)

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

T

, Juncti on Temperature [oC]

J

※

1. V

2. I

Notes :

D

= 0 V

GS

= 250 μA

Figure 7. Breakdown Voltage Variation

vs Temperature

2

10

1

10

0

10

, Drai n Current [A]

D

I

-1

10

-2

10

0

10

Operation in This Area is Limited by R

DS(on)

DC

※

Notes :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

1

10

2

10

VDS, Drai n-Source Voltage [V]

100 µs

1 ms

10 ms

10 µs

3.0

2.5

2.0

1.5

, ( Normali zed)

1.0

DS(ON)

R

Drain- Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

Notes :

= 10 V

1. V

GS

2. I

= 4.0 A

D

TJ, Juncti on Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature

2

10

1

10

3

10

0

10

, Drai n Current [A]

D

I

-1

10

-2

10

0

10

Operation in This Area is Limited by R

DS(on)

10 ms

DC

※

Notes :

1. T

= 25 oC

C

2. TJ = 150 oC

3. Single Pulse

1

10

2

10

VDS, Drai n-Source Vol tage [V]

1 ms

100 µs

10 µs

3

10

Figure 9-1. Maximum Safe Operating Area

for FQP8N80C

10

8

6

4

, Drai n Current [A]

D

I

2

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 4

Figure 9-2. Maximum Safe Operating Area

for FQPF8N80C

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Fairchild FQP8N80C, FQPF8N80C service manual

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Frequently Asked Questions

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