Datasheet FQP8N80C, FQPF8N80C Datasheet (Fairchild)

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU

800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

G

SD

TO-220

FQP Series

D

G

Features

• 8A, 800V, R

• Low gate charge ( typical 35 nC)

• Low Crss ( typical 13 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

RoHS Compliant

•

S

DS(on)

TO-220F

FQPF Series

= 1.55Ω @V

G

GS

!!!!

January 2009

QFET

= 10 V

D

!!!!

●●●●

◀◀◀◀

▲▲▲▲

●●●●

!!!!

S

TM

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQP8N80C FQPF8N80C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 800 V

Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

88 *A

5.1 5.1 * A

32 32 * A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)

(Note 1)

(Note 3)

850 mJ

8A

17.8 mJ

4.5 V/ns

178 59 W

- Derate above 25°C 1.43 0.48 W/°C

, T

T

J

STG

T

L

* Drain current limited by maximum junction temperature.

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FQP8N80C FQPF8N80C Units

R

θJC

R

θJS

R

θJA

Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, I

GS

= 250 µA, Referenced to 25°C

I

D

V

= 800 V, VGS = 0 V

DS

= 640 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

= 250 µA

D

800 -- -- V

-- 0.5 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

= VGS, I

DS

V

GS

V

DS

D

= 10 V, ID = 4 A

= 50 V, ID = 4 A

= 250 µA

(Note 4)

3.0 -- 5.0 V

-- 1.29 1.55 Ω

-- 5.6 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 135 175 pF

Reverse Transfer Capacitance -- 13 17 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1580 2050 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 110 230 ns

Turn-Off Delay Time -- 65 140 ns

Turn-Off Fall Time -- 70 150 ns

Total Gate Charge

Gate-Source Charge -- 10 -- nC

Gate-Drain Charge -- 14 -- nC

V

= 400 V, ID = 8 A,

DD

R

= 25 Ω

G

(Note 4, 5)

V

= 640 V, ID = 8 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 40 90 ns

-- 35 45 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 25mH, IAS = 8A, VDD = 50V, R

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 2

Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time Reverse Recovery Charge -- 8.2 -- µC

≤ 8A, di/dt ≤ 200A/µs, V

= 25 Ω, Starting T

G

≤ BV

DD

DSS,

= 25°C

J

Starting TJ = 25°C

V

= 0 V, IS = 8 A

GS

= 0 V, IS = 8 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.4 V

-- 690 -- ns

(Note 4)

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Typical Characteristics

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

V

GS

Top : 15.0 V

10.0 V

8.0 V

1

10

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

VGS = 20V

VGS = 10V

※

Note : T

℃

= 25

J

3.0

2.5

],

Ω

[

2.0

DS(ON)

R

1.5

Drain- Source On-Resistance

1.0 048121620

ID, Drain Current [ A]

1

10

150oC

0

10

, Drain Current [A]

D

I

-1

10

246810

25oC

-55oC

※

Notes :

1. V

2. 250μs Pulse Test

= 50V

DS

VGS, Gate-Sou rce Vol tage [ V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1

10

0

10

℃

, Rev erse Dr ain Cur rent [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD, Sourc e-Drai n voltage [ V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 160V

VDS = 400V

VDS = 640V

※

Note : I

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

C

iss

C

oss

C

rss

0

10

gd

10

※

1. V

2. f = 1 MHz

1

Notes :

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

010203040

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 8A

D

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Typical Characteristics

(Continued)

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

T

, Juncti on Temperature [oC]

J

※

1. V

2. I

Notes :

D

= 0 V

GS

= 250 μA

Figure 7. Breakdown Voltage Variation

vs Temperature

2

10

1

10

0

10

, Drai n Current [A]

D

I

-1

10

-2

10

0

10

Operation in This Area is Limited by R

DS(on)

DC

※

Notes :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

1

10

2

10

VDS, Drai n-Source Voltage [V]

100 µs

1 ms

10 ms

10 µs

3.0

2.5

2.0

1.5

, ( Normali zed)

1.0

DS(ON)

R

Drain- Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

Notes :

= 10 V

1. V

GS

2. I

= 4.0 A

D

TJ, Juncti on Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature

2

10

1

10

3

10

0

10

, Drai n Current [A]

D

I

-1

10

-2

10

0

10

Operation in This Area is Limited by R

DS(on)

10 ms

DC

※

Notes :

1. T

= 25 oC

C

2. TJ = 150 oC

3. Single Pulse

1

10

2

10

VDS, Drai n-Source Vol tage [V]

1 ms

100 µs

10 µs

3

10

Figure 9-1. Maximum Safe Operating Area

for FQP8N80C

10

8

6

4

, Drai n Current [A]

D

I

2

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 4

Figure 9-2. Maximum Safe Operating Area

for FQPF8N80C

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Typical Characteristics

(Continued)

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

0

10

D=0.5

0.2

-1

10

0.1

0.05

0.02

(t), Thermal Response

JC

0.01

θ

Z

-2

10

-5

10

single pulse

-4

10

-3

10

t

, Square Wave Pulse Duration [sec]

1

-2

10

※

Notes :

(t) = 0.7 ℃/W Ma x.

1. Z

θ

JC

2. D uty F acto r, D =t

3. TJM - TC = PDM * Z

-1

10

1/t2

(t)

θ

JC

0

Figure 11-1. Transient Thermal Response Curve for FQP8N80C

0

D=0.5

10

※

0.2

0.1

0.05

-1

10

0.02

0.01

(t), Th e rm a l R e sp on s e

JC

θ

Z

-2

10

-5

10

sin g le pu lse

-4

10

-3

10

-2

10

t1, Square Wave Pulse Duration [sec]

Notes :

1. Z

(t) = 2.1 ℃/W Ma x.

θ

JC

2. D uty F actor, D =t

3. TJM - TC = PDM * Z

-1

10

1/t2

θ

JC

0

10

1

10

(t)

1

10

Figure 11-2. Transient Thermal Response Curve for FQPF8N80C

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 5

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

V

DS

_

L

LL

Sam e T ype

as DU T

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

Driver

G

DUT

I

SD

V

DD

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

V

GS

( D riv e r )

I

SD

( D U T )

V

DS

( DUT )

G ate Pulse W idth

--------------------------

D =

Gate Pulse Period

IFM, B ody Diode Forw ard C urrent

IFM, B ody D iode Forw ard C urrent

I

RM

Body D iode R everse Current

Body D iode R ecovery dv/dt

V

SD

Body D iode

Forw ard Volta

g e D rop

di/dt

10V

V

DD

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A

6

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

V

DS

_

L

LL

Sam e T ype

as DU T

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

Driver

G

DUT

I

SD

V

DD

FDB037N06 N-Channel PowerTrench

®

MOSFET

V

GS

( D riv e r )

I

SD

( D U T )

V

DS

( DUT )

G ate Pulse W idth

--------------------------

D =

Gate Pulse Period

IFM, B ody D iode Forw ard C urrent

I

RM

Body D iode R everse Current

Body D iode R ecovery dv/dt

V

SD

Body D iode

Forw ard Volta

g e D rop

di/dt

10V

V

DD

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A

7

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Package Dimensions

FQP8N80C/FQPF8N80CFQPF8N80CYDTU 800V N-Channel MOSFET

TO-220

(1.70)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

(1.46)

(1.00)

1.27 ±0.10

9.90 ±0.20 (8.70)

ø3.60 ±0.10

(3.70)(3.00)

(45°)

1.52 ±0.10

2.80 ±0.1015.90 ±0.20

18.95MAX.

4.50 ±0.20

+0.10

1.30

–0.05

0.80 ±0.10

2.54TYP

±0.20]

[2.54

2.54TYP

±0.20]

[2.54

10.00 ±0.20

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 8

10.08 ±0.30

0.50

+0.10 –0.05

2.40 ±0.20

Dimensions in Millimeters

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

Package Dimensions

3.30 ±0.10

15.80 ±0.20

(Continued)

10.16 ±0.20 (7.00)

TO-220F

ø3.18 ±0.10

6.68 ±0.20

(1.00x45°)

2.54 (0.70)

±0.20

15.87 ±0.20

9.75 ±0.30

MAX1.47

0.80 ±0.10

0.35 ±0.10

2.54TYP

[2.54

±0.20]

#1

9.40 ±0.20

(30°)

2.54TYP

[2.54

±0.20]

4.70 ±0.20

0.50

+0.10 –0.05

2.76 ±0.20

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A

Dimensions in Millimeters

9

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FQF8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A

10

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TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter FPS™

®

tm

®

® ®

®

*

®

F-PFS™

* EZSWITCH™ and FlashWriter

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™ PowerTrench PowerXS™

®

tm

®

SM

Programmable Active Droop™

®

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

®

The Power Franchise

®

TinyBoost™

tm

TinyBuck™

®

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) sup port or sust ain life , and (c) whose failure to perform when properly used in accord ance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support

.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experi encing counterfeiting of the ir parts. Customers who inadvertently purchase counterfeit parts experie nce many pr oble ms such as loss o f brand reputat ion , substa ndard p erf ormance , faile d application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages custo mers to purchase Farichild p arts either di rectly from Fairchild or from Authorized Fairchil d Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or from a uthorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I37

1

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Datasheet FQP8N80C, FQPF8N80C Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

User Manual