Fairchild FQP6N40CF, FQPF6N40CF service manual
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FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
February 2006
TM
FRFET
Features
• 6A, 400V, R
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 70ns)
= 1.1 Ω @VGS = 10 V
DS(on)
G
D
S
TO-220
FQP Series
D
G
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.
D
G
S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol Parameter FQP6N40CF FQPF6N40CF Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
STG
T
L
* Drain current limited by maximum junction temperature
Drain-Source Voltage 400 V
Drain Current - Continuous (TC = 25°C) 6 6* A
- Continuous (T
Drain Current - Pulsed (Note 1) 24 24* A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy (Note 2) 270 mJ
Avalanche Current (Note 1) 6 A
Repetitive Avalanche Energy (Note 1) 73 mJ
Power Dissipation (TC = 25°C) 73 38 W
- Derate above 25°C 0.58 0.3 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 100°C) 3.6 3.6* A
C
300 °C
Thermal Characteristics
Symbol Parameter FQP6N40CF FQPF6N40CF Units
R
θJC
R
θCS
R
θJA
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQP6N40CF/FQPF6N40CF Rev. B
Thermal Resistance, Junction-to-Case 1.71 3.31 °C/W
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQP6N40CF FQP6N40CF TO-220 - - 50
FQPF6N40CF FQPF6N40CF TO-220F - - 50
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSSF
I
GSSR
DSS
DSS
J
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA400----V
/
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I
= 250 µA, Referenced to 25°C -- 0.54 -- V/°C
D
= 400 V, VGS = 0 V -- -- 1 µA
V
DS
V
= 320 V, TC = 125°C -- -- 10 µA
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source
On-Resistance
V
= 10 V, ID = 3 A -- 0.9 1.1 Ω
GS
Forward Transconductance VDS = 40 V, ID = 3 A (Note 4) -- 4.7 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 80 105 pF
Reverse Transfer Capacitance -- 15 20 pF
f = 1.0 MHz
-- 480 625 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time VDD = 200 V, ID = 6 A,
R
= 25 Ω
Turn-On Rise Time -- 65 140 ns
G
-- 13 35 ns
Turn-Off Delay Time -- 21 55 ns
Turn-Off Fall Time -- 38 85 ns
Total Gate Charge VDS = 320 V, ID = 6 A,
V
= 10 V
Gate-Source Charge -- 2.3 -- nC
GS
Gate-Drain Charge -- 8.2 -- nC
(Note 4, 5)
-- 16 20 nC
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.7mH, IAS = 6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BV
3. I
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 6 A,
Reverse Recovery Charge
Starting TJ = 25°C
DSS,
FQP6N40CF/FQPF6N40CF Rev. B
dI
/ dt = 100 A/µs (Note 4)
F
2 www.fairchildsemi.com
-- 70 -- ns
-- 0.12 -- µC
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
-55oC
Notes :※
1. VDS = 40V
2. 250µ s Pulse Test
1
10
0
10
, Drain Current [A]
D
I
-1
10
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
-1
GS
0
10
VDS, Drain-Source Voltage [V]
1
10
150oC
Notes :※
1. 250µ s Pulse Test
2. T
= 25℃
C
1
10
25oC
0
10
, Drain Current [A]
D
I
-1
10
246810
VGS, Gate-Source Volt age [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
3.5
3.0
2.5
[Ω ],
2.0
DS(ON)
R
1.5
Drain-Source On-Resistance
1.0
0.5
0 5 10 15 20
VGS = 10V
VGS = 20V
ID, Drain Current [A]
Note : T※J = 25℃
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
150℃
VSD, Source-Drain voltage [V]
25℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Charact eristics
1200
1000
800
600
400
Capacitances [pF]
200
0
-1
10
FQP6N40CF/FQPF6N40CF Rev. B
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
Note ;※
C
rss
0
10
1. VGS = 0 V
2. f = 1 MHz
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 5 10 15 20
VDS = 200V
VDS = 320V
VDS = 80V
Note : I※D = 6A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
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