Fairchild FQP6N40CF service manual

FQP6N40CF/FQPF6N40CF

TO-220

FQP Series

G

S

D

TO-220F

FQPF Series

G

S

D

D

G

S

400V N-Channel MOSFET

FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET

February, 2012

TM

FRFET

Features

• 6A, 400V, R

• Low gate charge ( typical 16nC)

• Low Crss ( typical 15pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode (typical 70ns)

= 1.1 Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been e
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.

specially tailored to

Absolute Maximum Ratings

Symbol Parameter FQP6N40CF FQPF6N40CF Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

P

D

, T

T

J

STG

T

L

* Drain current limited by maximum junction temperature

Drain-Source Voltage 400 V

Drain Current - Continuous (TC = 25°C) 6 6* A

- Continuous (T

Drain Current - Pulsed (Note 1) 24 24* A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy (Note 2) 270 mJ

Avalanche Current (Note 1) 6 A

Repetitive Avalanche Energy (Note 1) 73 mJ

Power Dissipation (TC = 25°C) 73 38 W

- Derate above 25°C 0.58 0.3 W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

= 100°C) 3.6 3.6* A

C

300 °C

Thermal Characteristics

Symbol Parameter FQP6N40CF FQPF6N40CF Units

R

θJC

R

θCS

R

θJA

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQP6N40CF/FQPF6N40CF Rev.C0

Thermal Resistance, Junction-to-Case 1.71 3.31 °C/W

Thermal Resistance, Case-to-Sink 0.5 -- °C/W

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tap e Widt h Quantity

FQP6N40CF FQP6N40CF TO-220 - - 50

FQPF6N40CF FQPF6N40CF TO-220F - - 50

FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ . Max. Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSSF

I

GSSR

DSS

DSS

J

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 400 -- -- V

/

Breakdown Voltage Temperature

ID = 250 μA, Referenced to 25°C -- 0.54 -- V/°C

Coefficient

Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 μA

= 320 V, TC = 125°C -- -- 10 μA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V

Static Drain-Source

VGS = 10 V, ID = 3 A -- 0.9 1.1 Ω

On-Resistance

Forward Transconductance VDS = 40 V, ID = 3 A (Note 4) -- 4.7 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 80 105 pF

f = 1.0 MHz

Reverse Transfer Capacitance -- 15 20 pF

-- 480 625 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Turn-On Delay Time VDD = 200 V, ID = 6 A,

= 25 Ω

R

Turn-On Rise Time -- 65 140 ns

G

Turn-Off Delay Time -- 21 55 ns

Turn-Off Fall Time -- 38 85 ns

g

gs

gd

Total Gate Charge VDS = 320 V, ID = 6 A,

= 10 V

V

Gate-Source Charge -- 2.3 -- nC

GS

Gate-Drain Charge -- 8.2 -- nC

(Note 4, 5)

(Note 4, 5)

-- 13 35 ns

-- 16 20 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 13.7mH, I

3. ISD ≤ 6A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 30

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 6 A,

/ dt = 100 A/μs (Note 4)

dI

Reverse Recovery Charge

= 6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

AS

0μs, Duty cycle ≤ 2%

Starting TJ = 25°C

DSS,

F

-- 70 -- ns

-- 0.12 -- μC

FQP6N40CF/FQPF6N40CF Rev.C0

2 www.fairchildsemi.com

Typical Performance Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V
Bottom : 5.0 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10

-1

10

0

10

1

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Sourc e Voltage [V]

0 5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0 .4 0.6 0.8 1.0 1.2 1.4

10

-1

10

0

10

1

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [ V]

0 5 10 15 20

0

2

4

6

8

10

12

VDS = 200V

VDS = 80V

VDS = 320V

* Note : ID = 6A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variati

on vs. Source Current

and Temperatue

FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FQP6N40CF/FQPF6N40CF Rev.C0

3 www.fairchildsemi.com