Fairchild FQP47P06, FQP47P06 Schematics
FQP47P06
P-Channel QFET® MOSFET
60 V, - 47 A, 26 mΩ
-
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconducto®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched
mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
G
D
S
TO-220
April 2013
Features
- 47 A, - 60 V, R
ID = - 23.5 A
• Low Gate Charge (Typ. 84 nC)
• Low Crss ( yp. 320 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temrature Rating.
= 26 mΩ @ VGS = - 10 V,
DS(on)
S
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D
FQP47P06 P-Channel QFET
®
MOSFET
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQP47P06 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -60 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-47 A
-33.2 A
-188 A
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
820 mJ
-47 A
16 mJ
-7.0 V/ns
160 W
- Derate above 25°C 1.06 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter
R
θJC
R
θCS
R
θJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQP47P06
0.94
0.5
62.5
Unit
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
FQP47P06 Rev. C0
www.fairchildsemi.com
Elerical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = -250 µA
GS
= -250 µA, Referenced to 25°C
I
D
V
= -60 V, VGS = 0 V
DS
= -48 V, TC = 150°C
V
DS
V
= -25 V, VDS = 0 V
GS
V
= 25 V, VDS = 0 V
GS
-60 -- -- V
-- -0.06 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -23.5 A
V
GS
V
= -30 V, ID = -23.5 A
DS
(Note 4)
-2.0 -- -4.0 V
-- 0.021 0.026 Ω
-- 21 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 1300 1700 pF
V
= -25 V, VGS = 0 V,
DS
f = 1.0 MHz
Reverse Transfer Capacitance -- 320 420 pF
-- 2800 3600 pF
FQP47P06 P-Channel QFET
®
MOSFET
Switching Characterist ics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 450 910 ns
Turn-Off Delay Time -- 100 210 ns
V
= -30 V, ID = -23.5 A,
DD
R
= 25 Ω
G
Turn-Off Fall Time -- 195 400 ns
Total Gate Charge
Gate-Source Charge -- 18 -- nC
V
= -48 V, ID = -47 A,
DS
V
= -10 V
GS
Gate-Drain Charge -- 44 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.43mH, IAS = -47A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -47A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- -47 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -188 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.55 -- µC
Starting TJ = 25°C
DSS,
= 0 V, IS = -47 A
GS
= 0 V, IS = -47 A,
V
GS
dI
/ dt = 100 A/µs
F
(Note 4, 5)
(Note 4, 5)
(Note 4)
-- 50 110 ns
-- 84 110 nC
-- -- -4.0 V
-- 130 -- ns
©2001 Fairchild Semiconductor Corporation
FQP47P06 Rev.
C0
www.fairchildsemi.com
Typical Characteristics
V
GS
Top : - 1 5.0 V
2
10
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
1
10
, Drain Current [A]
D
-I
0
10
-1
10
0
10
-VDS, Drain-Source Voltage [V]
※
Notes :
1. 250μs Pulse Test
℃
2. T
= 25
C
1
10
2
10
1
10
℃
175
℃
25
0
10
, Dra i n Current [A]
D
-I
-1
10
246810
℃
-55
※
Notes :
1. V
= -30V
DS
2. 250μs Pulse Tes t
-VGS , Gate-Source Voltage [V ]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
FQP47P06 P-Channel QFET
®
MOSFET
0.10
0.08
],
Ω
0.06
[
DS(on)
R
0.04
Drain-Source On-Resistance
0.02
0.00
0 100 200 300 400
VGS = - 10V
VGS = - 20V
-ID , Drai n Curren t [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8000
7000
6000
5000
4000
3000
Capacitance [pF]
2000
1000
0
-1
10
C
oss
C
iss
C
rss
0
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
= C
rss
10
※
Note : T
gd
1
= 25
J
gd
※
Notes :
1. V
2. f = 1 MHz
2
10
1
10
0
10
℃
175
℃
, Reve rs e D ra in Current [A]
℃
DR
-I
-1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
25
※
Notes :
= 0V
1. V
GS
2. 250μs Pulse Test
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
= 0 V
GS
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
0 102030405060708090
QG, Tota l Gate Charge [n C]
VDS = -30V
VDS = -48V
※
Note : I
= -47 A
D
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteris tics
©2001 Fairchild Semiconductor Corporation
FQP47P06
Rev. C0
www.fairchildsemi.com
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