Fairchild FQP45N15V2, FQPF45N15V2 service manual

FQP45N15V2/FQPF45N15V2

150V N-Channel MOSFET

FQP45N15V2/FQPF45N15V2

®

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 45A, 150V, R

• Low gate charge ( typical 72 nC)

• Low Crss ( typical 135 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

DS(on)

= 0.04Ω @V

GS

= 10 V

suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.

D

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S

G

SD

TO-220
FQP

Absolute Maximum Ratings

D

G

S

TC = 25°C unless otherw ise noted

TO-220F
FQPF

!!!!

!!!!

G

Symbol Parameter FQP45N15V2 FQPF45N15V2 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 150 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

45 45 * A

31 31 * A

180 180 * A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

1124 mJ

45 A

22 mJ

4.5 V/ns

220 66 W

- Derate above 25°C 1.47 0.44 W/°C

T

, T

J

STG

T

L

* Drain current limited by maximum junction temperature

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FQP45N15V2 F Q PF 45N15V2 Units

R

θJC

R

θCS

R

θJA

©2004 Fairchild Semiconductor Corporation Rev. A, October 2004

Thermal Resistance, Junction-to-Case 0.68 2.25 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

FQP45N15V2/FQPF45N15V2

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, I

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 150 V, VGS = 0 V

DS

= 120 V, TC = 150°C

V

DS

= 30 V, VDS = 0 V

V

GS

= -30 V, VDS = 0 V

V

GS

= 250 µA

D

150 -- -- V

-- 0.21 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

= VGS, I

V

DS

= 10 V, ID = 22.5 A

V

GS

= 40 V, ID = 22.5 A

V

DS

= 250 µA

D

(Note 4)

2.0 -- 4.0 V

-- 0.034 0.04 Ω

-- 40 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 510 670 pF

Reverse Transfer Capacitance -- 135 176 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 2330 3030 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 232 474 ns

Turn-Off Delay Time -- 224 458 ns

Turn-Off Fall Time -- 246 502 ns

Total Gate Charge

Gate-Source Charge -- 13 -- nC

Gate-Drain Charge -- 31 -- nC

= 75 V, ID = 45 A,

V

DD

= 25 Ω

R

G

(Note 4, 5)

V

= 120 V, ID = 45 A,

DS

V

= 10 V

GS

(Note 4, 5)

-- 22 54 ns

-- 72 94 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.74mH, I

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2004 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 45 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 180 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge -- 1.19 -- µC

= 45A, VDD = 50V, R

AS

≤ 45A, di/dt ≤ 200A/µs, VDD ≤ BV

= 25 Ω, Starting T

G

Starting TJ = 25°C

DSS,

= 25°C

J

= 0 V, IS = 45 A

V

GS

= 0 V, IS = 45 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 176 -- ns

(Note 4)

Rev. A, October 2004

Typical Characteristics

FQP45N15V2/FQPF45N15V2

V

GS

Top : 15.0 V

10.0 V

2

10

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

1

10

, Drain Current [A]

D

I

-1

10

0

10

VDS, Drain-Source Volt age [V]

0.14

0.12

0.10

VGS = 10V

[Ω ],

0.08

DS(ON)

R

0.06

Drain-Source On-Resistance

0.04

0.02
0 20 40 60 80 100 120 140 160 180

ID, Drai n Current [A]

Notes :

※

1. 250µ s Pulse Test

2. T

= 25

℃

C

1

10

VGS = 20V

Note : T

※

= 25

℃

J

2

10

175oC

25oC

1

10

0

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

Notes :

※

1. VDS = 40V

2. 250µ s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact er i st ics

2

10

1

10

175

℃

25

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.20.40.60.81.01.21.41.6

℃

Notes :

※

1. VGS = 0V

2. 250µ s Pul se Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

6000

5000

4000

3000

2000

Capacitance [pF]

1000

0

-1

10

Figure 5. Capacitance Characteristics

©2004 Fairchild Semiconductor Corporation

C

iss

C

oss

C

rss

C

iss

C

oss

C

rss

0

10

VDS, Drai n-Source Volt age [V]

= Cgs + Cgd (Cds = short ed)

= Cds + C

gd

= C

gd

Notes ;

※

1. VGS = 0 V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 75V

VDS = 120V

VDS = 30V

※

Note : I

D

= 45A

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 102030405060 7080

QG, Total Gate Charge [nC]

Figure 6. Gat e C harge Charact eristics

Rev. A, October 2004