Fairchild FQP44N10 service manual

FQP44N10

100V N-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQP44N10

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifiers, high efficiency switching DC/DC converters, and
DC motor control.

G

D

S

Absolute Maximum Ratings T

Symbol Parameter FQP44N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.97 W/°C

TO-220

FQP Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 43.5A, 100V, R

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 85 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.039Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

G

"
"

"

!

!

S

43.5 A

30.8 A
174 A

530 mJ

43.5 A

14.6 mJ

6.0 V/ns

146 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 1.03 °C/W
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A2, December 2000

FQP44N10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 21.75 A

V

GS

= 40 V, ID = 21.75 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.03 0.039 Ω

-- 30 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 425 550 pF
Reverse Transfer Capacitance -- 85 110 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1400 1800 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 190 390 ns
Turn-Off Delay Time -- 90 190 ns
Turn-Off Fall Time -- 100 21 0 n s
Total Gate Charge
Gate-Source Charge -- 9.0 -- nC
Gate-Drain Charge -- 24 -- nC

= 50 V, ID = 43.5 A,

V

DD

= 25 Ω

R

G

V

= 80 V, ID = 43.5 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 19 45 ns

-- 48 62 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.42mH, IAS = 43.5A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 43.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 43.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 174 A

= 0 V, IS = 43.5 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 360 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 43.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 98 -- ns

(Note 4)

Rev. A2, December 2000

Typical Characteristics

FQP44N10

V

GS

Top : 15.0 V

2

10

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

1

10

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

2. TC = 25

VDS, Drain-Source Voltage [V]

0.15

0.12

],

Ω

0.09

[

DS(on)

R

0.06

Drain-Source On-Resistance

0.03

0.00
0 30 60 90 120 150 180

VGS = 10V

VGS = 20V

ID , Drain Curren t [A ]

10

※

℃

1

Note : T

2

10

1

10

10

, Dra in Curre n t [A ]

D

I

10

℃

175

℃

25

0

-1

246810

℃

-55

※

Note s :

1. V

= 40V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2

10

1

10

0

10

, Reverse Drain Current [A]

DR

I

℃

= 25

J

175

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

℃

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Te st

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

4000

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

10

1

※

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

01020304050

QG, Tota l Gate Charge [n C]

VDS = 50V

VDS = 80V

※

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

= 43.5A

D

Rev. A2, December 2000©2000 Fairchild Semiconductor International