Fairchild FQP3N60C service manual

FQP3N60C

600V N-Channel MOSFET

FQP3N60C

January 2006

TM

QFET

Features

• 3A, 600V, R

• Low gate charge ( typical 10.5 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 5 pF)

rss

= 3.4Ω @VGS = 10 V

DS(on)

G

D

S

TO-220

FQP Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.

D

{

{

z

z









z

G

{

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z
z

z

{

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S

Absolute Maximum Ratings

Symbol Parameter FQP3N60C Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 600 V

Drain Current - Continuous (TC = 25°C)

Drain Current - Pulsed

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 3A

Repetitive Avalanche Energy (Note 1) 7.5 mJ

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

- Continuous (T

- Derate above 25°C

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

3

1.8

12 A

150 mJ

75

0.62

300 °C

A
A

W

W/°C

Thermal Characteristics

Symbol Parameter Typ. Max. Unit

R

θJC

R

θCS

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQP3N60C REV. A

Thermal Resistance, Junction-to-Case -- 1.67 °C/W

Thermal Resistance, Junction-to-Case 0.5 -- °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQP3N60C FQP3N60C TO-220 - - 50

600V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 600 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.6--V/°C

D

V

= 480V, TC = 125°C

DS

--

--

--

--

1

10

µA
µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA2.0--4.0V

Static Drain-Source
On-Resistance

Forward Transconductance VDS = 40V, ID = 1.5A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 45 60 pF

V

= 10V, ID = 1.5A -- 2.8 3.4 Ω

GS

(Note 4)

-- 3.5 -- S

-- 435 565 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 5 8 pF

Turn-O n Delay Time VDD = 300V, ID = 3A

R

= 25Ω

Turn-On Rise Time -- 30 70 ns

G

-- 12 34 ns

Turn-Off Delay Time -- 35 80 ns

Turn-Off Fall Time -- 35 80 ns

Total Gate Charge VDS = 480V, ID = 3A

V

= 10V

Gate-Source Charge -- 2.1 -- nC

GS

Gate-Drain Charge -- 4.5 -- nC

(Note 4, 5)

-- 10.5 14 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 3A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 3A

dI

/dt =100A/µs (Note 4)

Reverse Recovery Charge -- 1.6 -- µC

F

-- 260 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 3A, VDD = 50V, L=30mH, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

600V N-Channel MOSFET REV. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

600V N-Channel MOSFET

1

10

0

10

, Drain Current [A]

D

I

-1

10

10

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V
Bottom : 5.0 V

0

1

10

VDS, Drain-Source Voltage [V]

Notes :※

1. 250µ s Pulse Test

2. T

= 25℃

C

1

10

, Drain Current [A]

D

I

10

150oC

25oC

0

246810

VGS, Gate-Source Voltage [V]

-55oC

Notes :※

1. VDS = 40V

2. 250µ s Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

12

10

8

[Ω ],

6

DS(ON)

R

4

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

2

0

01234567

Note : T※J = 25℃

ID, Drain Current [A]

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.20.40.60.81.01.21.41.6

150℃

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

800

700

C

600

500

400

300

Capacitances [pF]

200

100

0

-1

10

600V N-Channel MOSFET REV. A

oss

C

iss

C

rss

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

Note ;※

1. VGS = 0 V

2. f = 1 MHz

0

1

10

12

10

8

6

4

, Gate-Source Voltage [ V]

2

GS

V

0

024681012

VDS = 120V

VDS = 300V

VDS = 480V

Note : I※D = 10A

QG, Total Gate Charge [nC]

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