Fairchild FQP3N50C, FQPF3N50C service manual
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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
®
QFET
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features
• 3 A, 500 V, R
• Low gate charge ( typical 10 nC )
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
= 2.5 Ω @ VGS = 10 V
DS(on)
G
D
S
TO-220
FQP Series
GSD
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
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S
TO-220F
FQPF Series
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G
Symbol Parameter FQP3N50C FQPF3N50C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
* Drain current limited by maximum junction temperature
Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
= 100°C)
C
Drain Current - Pulsed
(Note 1)
33 *
1.8 1.8 *
12 12 *
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
200 mJ
3A
6.2 mJ
4.5 V/ns
62 25
0.5 0.2
W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
300 °C
1/8" from case for 5 seconds
Thermal Characteristics
Symbol Parameter FQP3N50C FQPF3N50C Units
R
θJC
R
θJS
R
θJA
Thermal Resistance, Junction-to-Case 2.0 4.9 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
A
A
A
W
©2005 Fairchild Semiconductor Corporation
FQP3N50C/FQPF3N50C Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQP3N50C FQP3N50C TO-220 -- -- 50
FQPF3N50C FQPF3N50C TO-220F -- -- 50
FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSSF
I
GSSR
DSS
DSS
J
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
/
Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C
Coefficient
Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA
= 400 V, TC = 125°C -- -- 10 µA
V
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source
VGS = 10 V, ID = 1.5 A -- 2.1 2.5 Ω
On-Resistance
Forward Transconductance VDS = 40 V, ID = 1.5 A
(Note 4)
-- 1.5 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 50 65 pF
Reverse Transfer Capacitance -- 8.5 11 pF
f = 1.0 MHz
-- 280 365 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time VDD = 250 V, ID = 3 A,
Turn-On Rise Time -- 25 60 ns
Turn-Off Delay Time -- 35 80 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge VDS = 400 V, ID = 3 A,
Gate-Source Charge -- 1.5 -- nC
Gate-Drain Charge -- 5.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BV
3. I
SD
4. Pulse Test : Pul se width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 3 A,
Reverse Recovery Charge
Starting TJ = 25°C
DSS,
R
= 25 Ω
G
V
= 10 V
GS
dI
/ dt = 100 A/µs
F
(Note 4, 5)
(Note 4, 5)
(Note 4)
-- 10 30 ns
-- 10 13 nC
-- 170 -- ns
-- 0.7 -- µC
FQP3N50C/FQPF3N50C Rev. A
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
10
, Drain Current [A]
D
I
10
V
Top : 15.0 V
10.0 V
1
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
0
-1
-1
10
GS
0
10
VDS, Drain-Source Voltage [V]
Notes :
1. 250
µ
s Pulse Test
2. T
= 25°C
C
1
10
1
10
150°C
0
10
, Drain Current [A]
D
I
-1
10
246810
25
°
VGS , Gate-Source Volt age [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
8.0
7.5
7.0
6.5
6.0
5.5
],
Ω
5.0
[
4.5
DS(ON)
4.0
R
3.5
3.0
Drain-Source On-Resistance
2.5
2.0
1.5
0246810
VGS = 10V
ID, Drain Current [A]
VGS = 20V
Note : TJ = 25°C
0
10
150°C
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-Drain voltage [ V]
25°C
-55
°
Note
1. V
2. 250
Notes :
1. V
2. 250
= 40V
DS
µ
s Pulse Test
= 0V
GS
µ
s Pulse Test
FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
600
400
200
Capacitances [pF]
0
-1
10
VDS, Drain-Source Voltage [V]
FQP3N50C/FQPF3N50C Rev. A
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
Note ;
C
rss
0
10
1. V
2. f = 1 MHz
1
10
= 0 V
GS
12
10
8
VDS = 100V
VDS = 250V
VDS = 400V
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0510
Note : ID = 3A
QG, Total Gate Charge [nC]
3
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