Fairchild FQP3N50C, FQPF3N50C service manual

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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

®

QFET

FQP3N50C/FQPF3N50C

500V N-Channel MOSFET

Features

• 3 A, 500 V, R

• Low gate charge ( typical 10 nC )

• Low Crss ( typical 8.5 pF)

• Fast switching

• 100 % avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

= 2.5 Ω @ VGS = 10 V

DS(on)

G

D

S

TO-220

FQP Series

GSD

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

D

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S

TO-220F

FQPF Series

{{{{

G

Symbol Parameter FQP3N50C FQPF3N50C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

* Drain current limited by maximum junction temperature

Drain-Source Voltage 500 V

Drain Current - Continuous (TC = 25°C)

- Continuous (T

= 100°C)

C

Drain Current - Pulsed

(Note 1)

33 *

1.8 1.8 *

12 12 *

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C

(Note 2)

(Note 1)

(Note 3)

200 mJ

3A

6.2 mJ

4.5 V/ns

62 25

0.5 0.2

W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

300 °C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol Parameter FQP3N50C FQPF3N50C Units

R

θJC

R

θJS

R

θJA

Thermal Resistance, Junction-to-Case 2.0 4.9 °C/W

Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

A

W

FQP3N50C/FQPF3N50C Rev. A

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQP3N50C FQP3N50C TO-220 -- -- 50

FQPF3N50C FQPF3N50C TO-220F -- -- 50

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSSF

I

GSSR

DSS

J

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V

/

Breakdown Voltage Temperature

ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C

Coefficient

Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA

= 400 V, TC = 125°C -- -- 10 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

Static Drain-Source

VGS = 10 V, ID = 1.5 A -- 2.1 2.5 Ω

On-Resistance

Forward Transconductance VDS = 40 V, ID = 1.5 A

(Note 4)

-- 1.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 50 65 pF

Reverse Transfer Capacitance -- 8.5 11 pF

f = 1.0 MHz

-- 280 365 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time VDD = 250 V, ID = 3 A,

Turn-On Rise Time -- 25 60 ns

Turn-Off Delay Time -- 35 80 ns

Turn-Off Fall Time -- 25 60 ns

Total Gate Charge VDS = 400 V, ID = 3 A,

Gate-Source Charge -- 1.5 -- nC

Gate-Drain Charge -- 5.5 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BV

3. I

SD

4. Pulse Test : Pul se width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 3 A,

Reverse Recovery Charge

Starting TJ = 25°C

DSS,

R

= 25 Ω

G

V

= 10 V

GS

dI

/ dt = 100 A/µs

F

(Note 4, 5)

(Note 4)

-- 10 30 ns

-- 10 13 nC

-- 170 -- ns

-- 0.7 -- µC

FQP3N50C/FQPF3N50C Rev. A

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

10

, Drain Current [A]

D

I

10

V

Top : 15.0 V

10.0 V

1

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V Bottom : 5.0 V

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

Notes :

1. 250

µ

s Pulse Test

2. T

= 25°C

C

1

10

1

10

150°C

0

10

, Drain Current [A]

D

I

-1

10

246810

25

°

VGS , Gate-Source Volt age [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

8.0

7.5

7.0

6.5

6.0

5.5

],

Ω

5.0

[

4.5

DS(ON)

4.0

R

3.5

3.0

Drain-Source On-Resistance

2.5

2.0

1.5 0246810

VGS = 10V

ID, Drain Current [A]

VGS = 20V

Note : TJ = 25°C

0

10

150°C

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Source-Drain voltage [ V]

25°C

-55

°

Note

1. V

2. 250

Notes :

1. V

2. 250

= 40V

DS

µ

s Pulse Test

= 0V

GS

µ

s Pulse Test

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

600

400

200

Capacitances [pF]

0

-1

10

VDS, Drain-Source Voltage [V]

FQP3N50C/FQPF3N50C Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

Note ;

C

rss

0

10

1. V

2. f = 1 MHz

1

10

= 0 V

GS

12

10

8

VDS = 100V

VDS = 250V

VDS = 400V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0510

Note : ID = 3A

QG, Total Gate Charge [nC]

3

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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

Typical Performance Characteristics

(Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

1.1

1.0

, (Normalized)

BV

DSS

0.9

Notes :

1. V

2. I

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [°C]

= 0 V

GS

= 250µA

D

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [°C]

Notes :

1. V

= 10 V

GS

2. I

= 1.5 A

D

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area

of FQP3N50C of FQPF3N50C

2

10

Operation in This Area is Limit ed by R

DS(on)

2

10

Operation in This Area is Limit ed by R

DS(on)

1

10

0

10

100 ms

10 ms

1 ms

100 µs

DC

, Drain Current [A]

D

I

-1

10

-2

10

0

10

Notes :

1. T

C

2. T

J

3. Single Pulse

1

10

= 25°C

= 150°C

2

10

VDS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current

3

2

1

, Drain Current [A]

D

I

0

25 50 75 100 125 150

TC, Case Temperature [°C]

1

10

0

10

100 ms

10 ms

1 ms

100 µs

DC

, Drain Current [A]

D

I

-1

10

-2

10

3

10

0

10

Notes :

1. T

C

2. T

J

3. Single Pulse

1

10

= 25°C

= 150°C

2

10

3

10

VDS, Drain- Source Volt age [V]

FQP3N50C/FQPF3N50C Rev. A

4

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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

Typical Performance Characteristics

(Continued)

Figure 11-1. ransient Thermal Response Curve of FQP3N50C

0

D=0.5

10

0.2

0.1

0.05

-1

10

Note s :

1. Z

(t) = 2 °C/W Max.

θ

JC

2. Du ty Factor, D =t

3. TJM - TC = PDM * Z

1/t2

(t)

θ

JC

0.02

0.01

(t), Thermal Response

JC

θ

Z

-2

10

-5

single pulse

-4

10

-3

10

-2

10

-1

10

0

10

1

10

t1, Square Wave Pulse Duration [sec]

Figure 11-2. ransient Thermal Response Curve of FQPF3N50C

D=0.5

0

0.2

10

0.1

0.05

0.02

-1

10

0.01

(t), Thermal Response

JC

θ

Z

-2

10

single pulse

-5

-4

10

-3

10

Notes :

(t) = 4.9 °C/W Max.

1. Z

θ

JC

2. Du ty Fac tor, D= t

3. TJM - TC = PDM * Z

-2

-1

10

1/t2

(t)

θ

JC

0

10

1

10

t1, Square W ave Pulse Duration [sec]

FQP3N50C/FQPF3N50C Rev. A

5

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12V

200nF

3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

I

(t)

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FQP3N50C/FQPF3N50C Rev. A

6

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FQP3N50C/FQPF3N50C Rev. A

7

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Mechanical Dimensions

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

TO-220

(1.70)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

(1.46)

(1.00)

1.27 ±0.10

9.90 ±0.20 (8.70)

ø3.60 ±0.10

(3.70)(3.00)

(45°)

1.52 ±0.10

2.80 ±0.1015.90 ±0.20

18.95MAX.

4.50 ±0.20

+0.10

1.30

–0.05

2.54TYP

±0.20]

[2.54

10.00 ±0.20

0.80 ±0.10

2.54TYP

±0.20]

[2.54

10.08 ±0.30

0.50

+0.10 –0.05

2.40 ±0.20

Dimensions in Millimeters

FQP3N50C/FQPF3N50C Rev. A

8

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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

Mechanical Dimensions

10.16 ±0.20

3.30 ±0.10

15.80 ±0.20

(Continued)

(7.00)

TO-220F

ø3.18 ±0.10

6.68 ±0.20

(1.00x45°)

2.54 (0.70)

±0.20

0.20

15.87 ±

9.75 ±0.30

[2.54

MAX1.47

0.80 ±0.10

0.35 ±0.10

2.54TYP

±0.20]

#1

9.40 ±0.20

(30°)

2.54TYP

[2.54

±0.20]

4.70 ±0.20

0.50

+0.10 –0.05

2.76 ±0.20

FQP3N50C/FQPF3N50C Rev. A

Dimensions in Millimeters

9

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

A

CEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise

®

Programmable Active Droop™

®

FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™

IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC

®

OPTOPLANAR™ PACMAN™

POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™

SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET

®

UniFET™ VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

10

FQP3N50C/FQPF3N50C Rev. A

Rev. I15

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Fairchild FQP3N50C, FQPF3N50C service manual

Specifications and Main Features

Frequently Asked Questions

User Manual